Electromechanical response of stacking faults in monolayer 4H-SiC under electric field stress
Abstract
The behavior of structural defects in 4H-SiC under electric fields is vital to understanding the reliability of high-power and high-frequency devices. While static defects in SiC are well-studied, their real-time movement under electric field stress is not. This study uses density functional theory (DFT)-based molecular dynamics (MD) to examine how rotational stacking faults (RSFs) migrate in monolayer 4H-SiC under electric fields. By tracking defect positions over time, we analyze atomic velocities and displacements linked to migration. Our results show a localized migration near the stacking faults region, coupled with significant volumetric expansion along the field-transverse direction.
Downloads
Published
Issue
Section
License
By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.
