Engineering optically-interfaced spin qubits in silicon carbide

Abstract

I will present some of our group's working in developing quantum technologies based on single spins in silicon carbide, a semiconductor which uniquely combines excellent spin properties with mature microelectronics and promising photonics.

 In the first part of my talk, I will present our work on single vanadium centres in SiC, emitting in the telecom O-band. I will discuss the optical selection rules at the basis of spin-photon interfacing, and how material engineering (doping, isotopic composition) can be used to tune the quantum emitters properties, in terms of charge state control and tailoring of optical emission. In particular, we have shown that, by engineering the isotopic composition of the SiC matrix, we reduce the inhomogeneous spectral distribution of different emitters down to 100 MHz, significantly smaller than any other single quantum emitter.

In the second part of my talk, I will discuss our progress in fabricating large arrays of photonic microstructures to enhance photon collection efficiency, and in marker-free registration of single quantum emitters aligned to solid immersion lenses by femtosecond laser writing.