Polarity modulation in compositionally tunable Bi2O2Se thin films
Abstract
Two-dimensional (2D) materials have emerged as one of the most promising candidates to meet the demands of beyond-silicon technology. Among 2D semiconductors, Bi2O2Se (BOSe) stands out as a channel material for advanced electronic applications, due to its high electron mobility and the formation of a native high-k dielectric layer. However, fabricating p-type 2D BOSe transistors remains challenging. Here, we report an area-selective doping method at low temperatures (~600 K, compatible with back-end-of-line processes) for pulsed laser-deposited BOSe thin films, enabling the modulation of their carrier polarity through the introduction of Zn2+ substitutional dopants. Taking advantage of this doping strategy, we demonstrate the fabrication of a 2D vertical p-n homojunction with an on/off ratio in photoresponse of ~6-order enhancement and planar transistors based on p-doped BOSe homojunctions. Our results help promote the application of this material system towards the development of the next-generation electronics.
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