Investigation of the terahertz emission and detection characteristics of low-temperature grown gallium arsenide with aluminum arsenide barrier

Authors

Lourdes Nicole Dela Rosa ⋅ PH National Institute of Physics, University of the Philippines Diliman
Gerald Angelo Catindig ⋅ PH National Institute of Physics, University of the Philippines Diliman
Ivan Cedrick Verona ⋅ PH National Institute of Physics, University of the Philippines Diliman
Dean Von Johari Narag ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Roni Andig ⋅ PH National Institute of Physics, University of the Philippines Diliman
Gian Carlo Carrillo ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Craig Egan Allistair Tan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jonel Francisco ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
John Paul Ferrolino ⋅ PH Materials Science and Engineering Program, University of the Philippines Diliman
Mary Clare Escaño ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Hideaki Kitahara ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Alvin Karlo Tapia ⋅ PH Institute of Physics, University of the Philippines Los Baños
Masahiko Tani ⋅ JP Research Center for Development of Far-Infrared Region, University of Fukui
Hannah Bardolaza ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armado Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Low-temperature gallium arsenide with and without aluminum arsenide (AlAs) barrier were grown via molecular beam epitaxy and fabricated into photoconductive antenna (PCA) devices. The terahertz (THz) emission and detection characteristics of the PCAs were probed and compared via THz time-domain spectroscopy (TDS). Results show a slight shift toward the higher THz frequencies in the emission spectrum of the LT-GaAs/AlAs PCA since the AlAs layer acts as a carrier confinement layer, preventing the slow carriers from contributing to the THz emission. Conversely, we observed a slight shift toward the lower THz frequencies in the detection spectrum of the LT-GaAs/AlAs PCA. This may be due to the closer proximity of the carriers to the metal electrodes in the LT-GaAs/AlAs PCA, causing the carriers to have a lower average velocity. The results highlight the role of AlAs as a carrier confinement layer in tailoring THz PCA performance.

Issue

2025: Proceedings of the 43rd Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2025-3D-04

Section

Condensed Matter Physics and Materials Science

Published

2025-06-18

How to Cite

[1]

LN Dela Rosa, GA Catindig, IC Verona, DVJ Narag, R Andig, GC Carrillo, CEA Tan, J Francisco, JP Ferrolino, MC Escaño, H Kitahara, AK Tapia, M Tani, H Bardolaza, A Somintac, A Salvador, and E Estacio, Investigation of the terahertz emission and detection characteristics of low-temperature grown gallium arsenide with aluminum arsenide barrier, Proceedings of the Samahang Pisika ng Pilipinas 43, SPP-2025-3D-04 (2025). URL: https://proceedings.spp-online.org/article/view/SPP-2025-3D-04.