Investigation of the terahertz emission and detection characteristics of low-temperature grown gallium arsenide with aluminum arsenide barrier

Authors

  • Lourdes Nicole Dela Rosa National Institute of Physics, University of the Philippines Diliman
  • Gerald Angelo Catindig National Institute of Physics, University of the Philippines Diliman
  • Ivan Cedrick Verona National Institute of Physics, University of the Philippines Diliman
  • Dean Von Johari Narag Materials Science and Engineering Program, University of the Philippines Diliman
  • Roni Andig National Institute of Physics, University of the Philippines Diliman
  • Gian Carlo Carrillo Materials Science and Engineering Program, University of the Philippines Diliman
  • Craig Egan Allistair Tan National Institute of Physics, University of the Philippines Diliman
  • Jonel Francisco Materials Science and Engineering Program, University of the Philippines Diliman
  • John Paul Ferrolino Materials Science and Engineering Program, University of the Philippines Diliman
  • Mary Clare Escaño Research Center for Development of Far-Infrared Region, University of Fukui
  • Hideaki Kitahara Research Center for Development of Far-Infrared Region, University of Fukui
  • Alvin Karlo Tapia Institute of Physics, University of the Philippines Los Baños
  • Masahiko Tani Research Center for Development of Far-Infrared Region, University of Fukui
  • Hannah Bardolaza National Institute of Physics, University of the Philippines Diliman
  • Armado Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman

Abstract

Low-temperature gallium arsenide with and without aluminum arsenide (AlAs) barrier were grown via molecular beam epitaxy and fabricated into photoconductive antenna (PCA) devices. The terahertz (THz) emission and detection characteristics of the PCAs were probed and compared via THz time-domain spectroscopy (TDS). Results show a slight shift toward the higher THz frequencies in the emission spectrum of the LT-GaAs/AlAs PCA since the AlAs layer acts as a carrier confinement layer, preventing the slow carriers from contributing to the THz emission. Conversely, we observed a slight shift toward the lower THz frequencies in the detection spectrum of the LT-GaAs/AlAs PCA. This may be due to the closer proximity of the carriers to the metal electrodes in the LT-GaAs/AlAs PCA, causing the carriers to have a lower average velocity. The results highlight the role of AlAs as a carrier confinement layer in tailoring THz PCA performance.

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Published

2025-06-18

Issue

2025: Proceedings of the 43rd Samahang Pisika ng Pilipinas Physics Conference

Section

Condensed Matter Physics and Materials Science

License

By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Investigation of the terahertz emission and detection characteristics of low-temperature grown gallium arsenide with aluminum arsenide barrier”, Proc. SPP, vol. 43, no. 1, pp. SPP–2025, Jun. 2025, Accessed: Mar. 31, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2025-3D-04