Fabrication and characterization of laterally - graded Distributed Bragg Reflector based on porous silicon
Abstract
Laterally graded Distributed Bragg Reflector (DBR) based on porous silicon (PSi) was fabricated from 1cm x 3cm p-type silicon (100) in an HF ethanoic solution through electrochemical etching. The alternating layers were etched by varying the supplied anodic currents 15 mA and 90 mA with etch time of 42 sec. and 18 sec. respectively. Micrographs were also presented to confirm the alternating periodic layers produced as well as the lateral gradient on the substrates. The fabricated laterally graded DBR shows a maxima of reflection spectra from red to blue with maximum %reflectivities at 66.77 %, 81.16 %, 91.64 %, and 97.36 %. Simulation experiments were also presented to confirm the design of the experiment.