Influence of the temperature on the properties of indium oxide obtained via wet oxidation method

Authors

Clairecynth Yu ⋅ PH National Institute of Physics, University of the Philippines Diliman
Shiela Crosby ⋅ PH National Institute of Physics, University of the Philippines Diliman
Celestino Borja ⋅ PH National Institute of Physics, University of the Philippines Diliman
Fritz Christian Awitan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Mae Agatha Tumanguil ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Oxidation temperature was found to affect the structural and electrical properties of the In₂O₃ films fabricated via wet oxidation technique. Prior to the oxidation process, gold (Au) and indium (In) films were deposited on the p-type Silicon (100) substrate via electron beam deposition and resistive thermal evaporation respectively. Preferential growth of the (111) plane was observed for In₂O₃ films grown at temperature greater than or equal to 600°C. Below this temperature, In metal was not completely oxidized. SEM images show the increasing number as well as areas of voids in the indium oxide films with increasing temperature. From the I-V measurements, the increase in oxidation temperature is also accompanied by the change of the contact behavior of the films from Schottky to ohmic.

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Issue

2012: Proceedings of the 30th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2012-PB-25

Section

Poster Session PB

Published

2012-10-22

How to Cite

[1]

C Yu, S Crosby, C Borja, FC Awitan, MA Tumanguil, A Somintac, and A Salvador, Influence of the temperature on the properties of indium oxide obtained via wet oxidation method, Proceedings of the Samahang Pisika ng Pilipinas 30, SPP2012-PB-25 (2012). URL: https://proceedings.spp-online.org/article/view/SPP2012-PB-25.