Photoluminescence line-shape and intensity dependence on number of wells of GaAs-AlGaAs multiple quantum wells

Authors

Rhenish Simon National Institute of Physics, University of the Philippines Diliman
Jessica Afalla National Institute of Physics, University of the Philippines Diliman
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

The effects of varying the number of quantum wells on the photolumines- cence (PL) line-shape of GaAs-AlGaAs multiple quantum wells (MQW) is investigated. Samples having 20 pairs of GaAs-AlGaAs MQW were etched at different etch times to successively reduce the number of wells. PL measurements were performed and analyzed by comparing experimental data to the statistical model of free carrier recombination. The PL peak positions is observed to have insignificant variations. The PL broadening decrease is suggested to be caused by the decrease number of wells. Moreover, the surface roughness due to etching results in the rapid drop of the PL intensity. Small variation in the well width is observed from the narrowing of the line shape as the wells are etched.

Downloads

Issue

2012: Proceedings of the 30th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP2012-PA-23

Section

Poster Session PA

Published

2012-10-22

How to Cite

[1]

R Simon, J Afalla, E Estacio, and A Somintac, Photoluminescence line-shape and intensity dependence on number of wells of GaAs-AlGaAs multiple quantum wells, Proceedings of the Samahang Pisika ng Pilipinas 30, SPP2012-PA-23 (2012). URL: https://proceedings.spp-online.org/article/view/SPP2012-PA-23.