Photoluminescence line-shape and intensity dependence on number of wells of GaAs-AlGaAs multiple quantum wells
Abstract
The effects of varying the number of quantum wells on the photolumines- cence (PL) line-shape of GaAs-AlGaAs multiple quantum wells (MQW) is investigated. Samples having 20 pairs of GaAs-AlGaAs MQW were etched at different etch times to successively reduce the number of wells. PL measurements were performed and analyzed by comparing experimental data to the statistical model of free carrier recombination. The PL peak positions is observed to have insignificant variations. The PL broadening decrease is suggested to be caused by the decrease number of wells. Moreover, the surface roughness due to etching results in the rapid drop of the PL intensity. Small variation in the well width is observed from the narrowing of the line shape as the wells are etched.
Downloads
Published
Issue
Section
License
By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.
