Fabrication and characterization of Indium Oxide heterojunction photodiodes on p-Silicon(111)

Authors

Renebeth Payod ⋅ PH National Institute of Physics, University of the Philippines Diliman
Clairecynth Yu ⋅ PH National Institute of Physics, University of the Philippines Diliman
Daniel Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joseph Christopher Ragasa ⋅ PH National Institute of Physics, University of the Philippines Diliman
Mae Agatha Tumanguil ⋅ PH National Institute of Physics, University of the Philippines Diliman
Neil Irvin Cabello ⋅ PH National Institute of Physics, University of the Philippines Diliman
Fritz Christian Awitan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Indium Oxide/p-Silicon (In₂O₃/p-Si) heterojunction photodiodes were successfully fabricated via standard photolithography and thermal oxidation
technique using a cost-effective etching-free route as compared to other conventional deposition and plasma etching methods. XRD spectra revealed
highly-oriented (111) growth similar to the substrate orientation. SEM images of the photodiodes showed the dominant surface morphology of the
formed In₂O₃. I-V curve obtained from the device resulted to a non-linear diode behavior with a turn-on voltage of approximately 0.8V under non-
illuminated conditions. A 0.5mA I-V shift from the reverse bias region of the illuminated device showed a probable photocurrent generation along the
wavefunction. Photocurrent spectroscopy and reponsivity measurements of the device resulted to similar characteristics with the commercially available
Si photodiodes.

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Issue

2012: Proceedings of the 30th Samahang Pisika ng Pilipinas Physics Congress

Exploring physics research in the health sciences
22-24 October 2012, De La Salle Health Sciences Institute, Dasmariñas City

Article ID

SPP2012-6C-5

Section

Condensed Matter Physics

Published

2012-10-22

How to Cite

[1]

R Payod, C Yu, D Vasquez, JC Ragasa, MA Tumanguil, NI Cabello, FC Awitan, A Somintac, and A Salvador, Fabrication and characterization of Indium Oxide heterojunction photodiodes on p-Silicon(111), Proceedings of the Samahang Pisika ng Pilipinas 30, SPP2012-6C-5 (2012). URL: https://proceedings.spp-online.org/article/view/SPP2012-6C-5.