Fabrication and characterization of Indium Oxide heterojunction photodiodes on p-Silicon(111)
Abstract
Indium Oxide/p-Silicon (In2O3/p-Si) heterojunction photodiodes were successfully fabricated via standard photolithography and thermal oxidation
technique using a cost-effective etching-free route as compared to other conventional deposition and plasma etching methods. XRD spectra revealed
highly-oriented (111) growth similar to the substrate orientation. SEM images of the photodiodes showed the dominant surface morphology of the
formed In2O3. I-V curve obtained from the device resulted to a non-linear diode behavior with a turn-on voltage of approximately 0.8V under non-
illuminated conditions. A 0.5mA I-V shift from the reverse bias region of the illuminated device showed a probable photocurrent generation along the
wavefunction. Photocurrent spectroscopy and reponsivity measurements of the device resulted to similar characteristics with the commercially available
Si photodiodes.