Growth of Indium Oxide on Silicon (100) substrates via direct thermal oxidation

Authors

Fritz Christian Awitan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Mae Agatha Tumanguil ⋅ PH National Institute of Physics, University of the Philippines Diliman
Neil Irvin Cabello ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jake Ragasa ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joselito Muldera ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jessica Afalla ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Indium oxide (In₂O₃) was grown from AuIn thin films on Silicon (Si) (100) substrates via direct thermal oxidation technique. The morphology of the product material was varied by changing the rate of sample cooling after the oxidation stage at 550Â°C. Pyramidal nanostructures and rod-like nanostructures were grown from the
slowly-cooled sample while film-like morphology was achieved by quenching the sample.

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Published

2012-10-22

Issue

2012: Proceedings of the 30th Samahang Pisika ng Pilipinas Physics Congress

Section

Condensed Matter Physics

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How to Cite

[1]

“Growth of Indium Oxide on Silicon (100) substrates via direct thermal oxidation”, Proc. SPP, vol. 30, no. 1, pp. SPP2012–6A, Oct. 2012, Accessed: Apr. 16, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP2012-6A-3