Growth of Indium Oxide on Silicon (100) substrates via direct thermal oxidation

Authors

  • Fritz Christian Awitan ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Mae Agatha Tumanguil ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Neil Irvin Cabello ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Jake Ragasa ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Joselito Muldera ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Jessica Afalla ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Indium oxide (In2O3) was grown from AuIn thin films on Silicon (Si) (100) substrates via direct thermal oxidation technique. The morphology of the product material was varied by changing the rate of sample cooling after the oxidation stage at 550°C. Pyramidal nanostructures and rod-like nanostructures were grown from the
slowly-cooled sample while film-like morphology was achieved by quenching the sample.

Downloads

Issue

Article ID

SPP2012-6A-3

Section

Condensed Matter Physics

Published

2012-10-22

How to Cite

[1]
FC Awitan, MA Tumanguil, NI Cabello, J Ragasa, J Muldera, J Afalla, A Somintac, and A Salvador, Growth of Indium Oxide on Silicon (100) substrates via direct thermal oxidation, Proceedings of the Samahang Pisika ng Pilipinas 30, SPP2012-6A-3 (2012). URL: https://proceedings.spp-online.org/article/view/SPP2012-6A-3.