Large area porous silicon based Distributed Bragg Reflectors with tunable peak reflectivity wavelength
Abstract
P-type silicon (100) substrates of dimensions 2 cm x 2.75 cm were electrochemically etched in ethanoic HF solution to fabricate Distributed Bragg Reflectors (DBRs) at different peak reflectivity wavelengths.The alternating layers were etched by varying the supplied anodic currents at certain etch time. The fabricated DBRs were of maximum%reflectivity 88.07%, 98.30%, 92.22%, and 84.43% at peak reflectivity wavelengths 5300Å, 5900Å, 6200Å, and 7400Å respectively. Larger area means lesser gradient effects on the DBRs since lateral anodization cell was used in etching.