Simulation of Aluminum Gallium Arsenide/Gallium Arsenide (AlGaAs/GaAs) High Electron Mobility Transistor (HEMTs) energy band diagram with spacer using shooting method

Authors

Renebeth Payod ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jasher John Ibañes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Variable effective-mass shooting method is used to generate the Aluminum Gallium Arsenide/Gallium Arsenide (AlGaAs/GaAs) with mole fraction χ equal to 0.3 High Electron Mobility Transistors (HEMTs) energy band diagram with eigenenergies and their corresponding wavefunctions. Increasing doping concentration shows more band bending graphs that agree with the theoretical description of a HEMT heterostructure layer.

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Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP2011-6C-2

Section

Condensed Matter and Materials Physics

Published

2011-10-24

How to Cite

[1]

R Payod, JJ Ibañes, and A Somintac, Simulation of Aluminum Gallium Arsenide/Gallium Arsenide (AlGaAs/GaAs) High Electron Mobility Transistor (HEMTs) energy band diagram with spacer using shooting method, Proceedings of the Samahang Pisika ng Pilipinas 29, SPP2011-6C-2 (2011). URL: https://proceedings.spp-online.org/article/view/SPP2011-6C-2.