Simulation of Aluminum Gallium Arsenide/Gallium Arsenide (AlGaAs/GaAs) High Electron Mobility Transistor (HEMTs) energy band diagram with spacer using shooting method

Authors

  • Renebeth Payod ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Jasher John Ibañes ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Variable effective-mass shooting method is used to generate the Aluminum Gallium Arsenide/Gallium Arsenide (AlGaAs/GaAs) with mole fraction χ equal to 0.3 High Electron Mobility Transistors (HEMTs) energy band diagram with eigenenergies and their corresponding wavefunctions. Increasing doping concentration shows more band bending graphs that agree with the theoretical description of a HEMT heterostructure layer.

SPP2011 Conference Proceedings Cover

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Published

2011-10-24

Issue

2011: Proceedings of the 29th Samahang Pisika ng Pilipinas National Physics Congress

Section

Condensed Matter and Materials Physics

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How to Cite

[1]
“Simulation of Aluminum Gallium Arsenide/Gallium Arsenide (AlGaAs/GaAs) High Electron Mobility Transistor (HEMTs) energy band diagram with spacer using shooting method”, Proc. SPP, vol. 29, no. 1, pp. SPP2011–6C, Oct. 2011, Accessed: Apr. 12, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP2011-6C-2