Epitaxy of/on 2D materials: From interface engineering to device applications

Authors

  • Wen-Hao CHANG ⋅ TW Department of Electrophysics, National Yang Ming Chiao Tung University and Research Center for Applied Sciences, Academia Sinica

Abstract

Recent advances in two-dimensional (2D) materials have enabled new device opportunities, yet achieving high performance requires precise control of interfaces and integration. While epitaxy of 2D materials on conventional substrates has been extensively studied, the emerging concept of epitaxy on 2D materials remains less explored. In this talk, I will present our recent advancements in epitaxy on 2D materials, including 2D-2D epitaxy and the growth of epitaxial metal and oxide layers on 2D MoS2. The resulting high-quality oxides enable integration of high-k dielectrics, leading to MoS2 top-gate FETs with sub-nanometer equivalent oxide thickness (EOT) and high transconductance. Furthermore, I will discuss the feasibility of remote epitaxy of metals on MoS2 mediated by ultrathin oxide interlayers, highlighting new pathways for scalable device integration and interface design.

About the Speaker

  • Wen-Hao CHANG, Department of Electrophysics, National Yang Ming Chiao Tung University and Research Center for Applied Sciences, Academia Sinica

    Wen-Hao CHANG received his BS (1994), MS (1996) and PhD (2001) degrees in Physics from National Central University (NCU), Taiwan. After his postdoctoral research at NCU, he joined the Department of Electrophysics at National Yang Ming Chiao Tung University (NYCU) as an assistant professor in 2005 and became a full professor since 2012. Dr. Chang joined the Research Center for Applied Sciences (RCAS), Academia Sinica in 2020 as a Distinguished Research Fellow and the Acting Executive Officer of the Thematic Center for Quantum Photonics. His research interests include lightmatter interactions in low-dimensional semiconductor nanostructures, semiconductor quantum optics, and 2D layered materials. He has authored and coauthored more than 170 journal papers and received citations more than 16,000 times with an h-index of 55 (Google Scholar, May 2026).
    He was awarded the Distinguished Teaching Award (2010, 2016) from NYCU, the Ta-Yu Wu Memorial Award (2010) and the Distinguished Research Award (2018) from the National Science and Technology Council (NSTC) of Taiwan, the Academic Award (2018) from the Sun Yat-sen Academic and Cultural Foundation, and the Achievement in Asia Award (Robert T. Poe Prize, 2020) given by the International Organization of Chinese Physicists and Astronomers (OCPA). Dr. Chang is an elected fellow of The Physical Society of Taiwan.

SPP2026 Proceedings Cover

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Published

2026-06-23

Issue

2026: Proceedings of the 44th Samahang Pisika ng Pilipinas Physics Conference

Section

Plenary Sessions

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How to Cite

[1]
W-H CHANG, Epitaxy of/on 2D materials: From interface engineering to device applications, in Proceedings of the 44th Samahang Pisika ng Pilipinas Physics Conference (Philippines, 2026), SPP-2026-INV-PS-21. URL: https://proceedings.spp-online.org/article/view/SPP-2026-INV-PS-21
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