Comparison of the carrier lifetimes of molecular beam epitaxy grown InxGa1−xAs/GaAs multi-quantum wells with different barrier heights

Authors

  • Lourdes Nicole Dela Rosa National Institute of Physics, University of the Philippines Diliman, Philippines
  • Vince Paul Juguilon National Institute of Physics, University of the Philippines Diliman, Philippines
  • Deborah Anne Lumantas-Colades National Institute of Physics, University of the Philippines Diliman, Philippines
  • Karim Omambac Polytechnique Montréal, Canada
  • Gerald Angelo Catindig National Institute of Physics, University of the Philippines Diliman, Philippine
  • Inhee Maeng YUHS-KRIBB Medical Convergence Institute, Yonsei University College of Medicine, Seoul, Republic of Korea
  • Chul Kang Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Republic of Korea
  • Hannah Bardolaza National Institute of Physics, University of the Philippines Diliman, Philippines
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman, Philippines
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman, Philippines
  • Chul-Sik Kee Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Republic of Korea
  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman, Philippines

Abstract

Two indium gallium arsenide InxGa1−x As/gallium arsenide (GaAs) multi-quantum wells (MQW) were grown via molecular beam epitaxy with indium mole fractions of 0.166 (MQW 412) and 0.154 (MQW 417). Then, optical pump terahertz probe (OPTP) spectroscopy was performed to investigate the carrier dynamics in InxGa1−x As/GaAs MQWs. From the OPTP measurements, the decay of the photoexcited carriers in the samples was generated. The MQW 412 and 417 well carrier lifetimes were calculated to be τMQW 412 = 256 ps and τMQW 417 = 158 ps, respectively. Moreover, the carrier lifetime of the MQW is influenced by the barrier height wherein a higher barrier height leads to a longer carrier lifetime.

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Published

2025-06-19

Issue

2025: Proceedings of the 43rd Samahang Pisika ng Pilipinas Physics Conference

Section

Poster Session PA (Photonics, Condensed Matter, Materials and Quantum Science)

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How to Cite

[1]
“Comparison of the carrier lifetimes of molecular beam epitaxy grown InxGa1−xAs/GaAs multi-quantum wells with different barrier heights”, Proc. SPP, vol. 43, no. 1, p. SPP-2025-PA-27, Jun. 2025, Accessed: Mar. 31, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2025-PA-27