Comparison of the carrier lifetimes of molecular beam epitaxy grown In_xGa_1−xAs/GaAs multi-quantum wells with different barrier heights

Authors

Lourdes Nicole Dela Rosa ⋅ PH National Institute of Physics, University of the Philippines Diliman, Philippines
Vince Paul Juguilon ⋅ PH National Institute of Physics, University of the Philippines Diliman, Philippines
Deborah Anne Lumantas-Colades ⋅ PH National Institute of Physics, University of the Philippines Diliman, Philippines
Karim Omambac ⋅ CA Polytechnique Montréal, 2500 Chem. de Polytechnique, Montréal, Canada
Gerald Angelo Catindig ⋅ PH National Institute of Physics, University of the Philippines Diliman, Philippine
Inhee Maeng ⋅ KR YUHS-KRIBB Medical Convergence Institute, Yonsei University College of Medicine, Seoul, Republic of Korea
Chul Kang ⋅ KR Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju, Republic of Korea
Hannah Bardolaza ⋅ PH National Institute of Physics, University of the Philippines Diliman, Philippines
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman, Philippines
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman, Philippines
Chul-Sik Kee ⋅ KR Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju, Republic of Korea
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman, Philippines

Abstract

Two indium gallium arsenide In_xGa_1−xAs/gallium arsenide (GaAs) multi-quantum wells (MQW) were grown via molecular beam epitaxy with indium mole fractions of 0.166 (MQW 412) and 0.154 (MQW 417). Then, optical pump terahertz probe (OPTP) spectroscopy was performed to investigate the carrier dynamics in In_xGa_1−xAs/GaAs MQWs. From the OPTP measurements, the decay of the photoexcited carriers in the samples was generated. The MQW 412 and 417 well carrier lifetimes were calculated to be τ_{MQW 412} = 256 ps and τ_{MQW 417} = 158 ps, respectively. Moreover, the carrier lifetime of the MQW is influenced by the barrier height wherein a higher barrier height leads to a longer carrier lifetime.

Issue

2025: Proceedings of the 43rd Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2025-PA-27

Section

Poster Session PA (Photonics, Condensed Matter, Materials and Quantum Science)

Published

2025-06-19

How to Cite

[1]

LN Dela Rosa, VP Juguilon, DA Lumantas-Colades, K Omambac, GA Catindig, I Maeng, C Kang, H Bardolaza, A Somintac, A Salvador, C-S Kee, and E Estacio, Comparison of the carrier lifetimes of molecular beam epitaxy grown InxGa1−xAs/GaAs multi-quantum wells with different barrier heights, Proceedings of the Samahang Pisika ng Pilipinas 43, SPP-2025-PA-27 (2025). URL: https://proceedings.spp-online.org/article/view/SPP-2025-PA-27.