Goos-Hänchen shift: An optical phenomenon to measure thin film thickness of SiO2
Abstract
Thin films have found a niche in industry, technology and academic research. They are in semiconductors, display panels and wearable electronics. Here, we present a method for measuring the thickness of thin films by exploiting the Goos-Hanchen shift - an optical phenomenon that is a correction to the law of reflection. We calculated the GH shift for an air-SiO2-Si thin film to demonstrate the technique. We showed that we can distinguish thickness in the order of 1 nm to 10 nm. This technique is a simple, all optical, non-destructive method to measure thin film thickness.
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From laboratory to society: Physics in nation building
29 May-1 June 2019, Tagbilaran City
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