Goos-Hänchen shift: An optical phenomenon to measure thin film thickness of SiO₂

Authors

Jadze Princeton Casilana Narag ⋅ PH National Institute of Physics, University of the Philippines Diliman
Nathaniel Hermosa ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jenny Lou Sagisi ⋅ PH National Institute of Physics, University of the Philippines Diliman
Niña Angelica Zambale ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Thin films have found a niche in industry, technology and academic research. They are in semiconductors, display panels and wearable electronics. Here, we present a method for measuring the thickness of thin films by exploiting the Goos-Hanchen shift - an optical phenomenon that is a correction to the law of reflection. We calculated the GH shift for an air-SiO2-Si thin film to demonstrate the technique. We showed that we can distinguish thickness in the order of 1 nm to 10 nm. This technique is a simple, all optical, non-destructive method to measure thin film thickness.

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Issue

2019: Proceedings of the 37th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2019-3B-06

Section

Ultrafast Optics, Photonics, and Terahertz Physics

Published

2019-05-24

How to Cite

[1]

JPC Narag, N Hermosa, JL Sagisi, and NA Zambale, Goos-Hänchen shift: An optical phenomenon to measure thin film thickness of SiO2, Proceedings of the Samahang Pisika ng Pilipinas 37, SPP-2019-3B-06 (2019). URL: https://proceedings.spp-online.org/article/view/SPP-2019-3B-06.