Low temperature scanning tunneling microscopy and spectroscopy of undoped LT-GaAs

Authors

  • Maria Hermina Balgos National Institute of Physics, University of the Philippines Diliman
  • Elizabeth Ann Prieto National Institute of Physics, University of the Philippines Diliman
  • Rafael Jaculbia Surface and Interface Science Laboratory, RIKEN
  • Elmer Estacio National Institute of Physics, University of the Philippines Diliman
  • Arnel Salvador National Institute of Physics, University of the Philippines Diliman
  • Yousoo Kim Surface and Interface Science Laboratory, RIKEN
  • Norihiko Hayazawa Surface and Interface Science Laboratory, RIKEN
  • Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

We report for the first time on the scanning tunneling microscopy (STM) and spectroscopy (STS) of undoped low temperature grown GaAs (LT-GaAs) measured at 4.7 K. The high resistivity of the LT-GaAs layer was compensated by growing it on top of a (100) n+-GaAs substrate due to the carrier injection at the interface. LT-GaAs was shown to have p-type conductivity based on the STS spectrum. Stable imaging is achieved at a sample bias of -2.5 V.

SPP 2018 Proceedings cover

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Published

2018-05-24

How to Cite

[1]
MH Balgos, EA Prieto, R Jaculbia, E Estacio, A Salvador, Y Kim, N Hayazawa, and A Somintac, Low temperature scanning tunneling microscopy and spectroscopy of undoped LT-GaAs, Proceedings of the Samahang Pisika ng Pilipinas 36, SPP-2018-PA-08 (2018). URL: https://proceedings.spp-online.org/article/view/SPP-2018-PA-08.

Issue

2018: Proceedings of the 36th Samahang Pisika ng Pilipinas Physics Conference

Section

Poster Session A (Materials Science, Instrumentation, and Photonics)

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