Low temperature scanning tunneling microscopy and spectroscopy of undoped LT-GaAs

Authors

Maria Hermina Balgos National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann Prieto National Institute of Physics, University of the Philippines Diliman
Rafael Jaculbia Surface and Interface Science Laboratory, RIKEN
Elmer Estacio National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman
Yousoo Kim Surface and Interface Science Laboratory, RIKEN
Norihiko Hayazawa Surface and Interface Science Laboratory, RIKEN
Armando Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

We report for the first time on the scanning tunneling microscopy (STM) and spectroscopy (STS) of undoped low temperature grown GaAs (LT-GaAs) measured at 4.7 K. The high resistivity of the LT-GaAs layer was compensated by growing it on top of a (100) n⁺-GaAs substrate due to the carrier injection at the interface. LT-GaAs was shown to have p-type conductivity based on the STS spectrum. Stable imaging is achieved at a sample bias of -2.5 V.

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Published

2018-05-24

How to Cite

[1]

MH Balgos, EA Prieto, R Jaculbia, E Estacio, A Salvador, Y Kim, N Hayazawa, and A Somintac, Low temperature scanning tunneling microscopy and spectroscopy of undoped LT-GaAs, Proceedings of the Samahang Pisika ng Pilipinas 36, SPP-2018-PA-08 (2018). URL: https://proceedings.spp-online.org/article/view/SPP-2018-PA-08.