Electrical and structural properties of CuxO film at varying annealing temperatures

Abstract

Copper oxide thin films were deposited on glass substrates using spray pyrolysis technique and were subsequently annealed at 160°C and 400°C for two hours. The effects of annealing on the structural and electrical properties of the films were investigated using X-ray diffraction (XRD) and Hall effect measurements. XRD pattern of the films revealed the formation of single phase cupric oxide for un-annealed sample, while intensified diffraction peaks and decreased FWHM were observed for annealed samples attributed to increased crystallinity. Hall effect measurements showed that the deposited films exhibited p-type conductivity. Increased mobility and decreased in resistivity leads to enhancement of conductivity at elevated temperatures.