Soft paraffin supported transfer of graphene

Abstract

Graphene on copper grown by chemical vapor deposition was transferred to SiO₂/Si using soft paraffin scaffold. Two sample process steps are investigated: brief melting of the scaffold material under rough vacuum and exposure of the graphene-paraffin in n-hexane vapor. A combination of the two processes is also explored. Raman spectroscopy shows that all samples have graphene islands. The defect D peak is enhanced on removal of scaffold material. Nearly 100% of graphene was transferred by carefully combining the two steps. The transfer technique will enable fabrication of graphene coated surfaces and graphene based devices.