Interface electric fields of cuprous oxide/silicon heterostructures for enhanced terahertz emission
Abstract
Cuprous oxide thin films were deposited on Si substrates having different doping types through spray pyrolysis to investigate the terahertz (THz) generation mechanism from cuprous oxide/Si (Cu2O/Si) heterostructures. Reflection-mode terahertz time-domain spectroscopy (THz-TDS) showed that Cu2O/Si heterostructures emitted THz radiation stronger by an order of magnitude than the Si substrate. This was attributed to the enhanced electric field at the Cu2O/Si interface. The TDS waveform phase was shown to be independent of the doping type of Si. This showed that the photocarriers that caused the emission of the THz electric field did not change in transport direction. Our results are consistent with simulations using the Anderson model under the depletion approximation.