Terahertz emission from InSb and GaAs under 650 mT magnetic field

Authors

Alexander De los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Lorenzo Lopez, Jr. ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joselito Muldera ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Kohji Yamamoto ⋅ JP Research Center for the Development of Far-Infrared Region, University of Fukui
Masahiko Tani ⋅ JP Research Center for the Development of Far-Infrared Region, University of Fukui
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

The effects of an external magnetic field (B-field) on the terahertz (THz) emission from doped indium antimonide (InSb) and gallium arsenide (GaAs) wafers were compared. Results have shown that the THz emission from InSb (p-InSb and n-InSb) increased, independent of the B-field polarity. In contrast, the THz emission from GaAs (p-GaAs and n-GaAs) showed preference for enhancement in one B-field polarity. The opposite polarity resulted to an attenuation of the THz signal. These differences in the B-field enhancement characteristics are attributed to significant differences in the effective masses of electrons and holes in InSb and GaAs.

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Published

2016-08-18

Issue

2016: Proceedings of the 34th Samahang Pisika ng Pilipinas Physics Conference

Section

Optics and Photonics

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How to Cite

[1]

“Terahertz emission from InSb and GaAs under 650 mT magnetic field”, Proc. SPP, vol. 34, no. 1, pp. SPP–2016, Aug. 2016, Accessed: Apr. 16, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2016-3B-03