Red electroluminescence based on oxygen interstitial defects of annealed zinc oxide nanorods

Authors

Anthony Tuico ⋅ PH Materials Science Engineering Program, University of the Philippines Diliman
Lorenzo Lopez, Jr. ⋅ PH Materials Science Engineering Program, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Red light-emitting diode was fabricated using zinc oxide nanorods grown on silicon substrate. The nanorods were grown on spray-deposited zinc oxide seed layer on p-type silicon (100). Photolithography procedures were conducted to isolate the nanorods for further enhancement in the recombination process or emission. X-ray diffraction confirmed the growth of zinc oxide nanorods through the signature peaks at planes (002) and (103). Surface profilometer measurements verified the growth of nanorods having a length of 1.8 μm. UV-visible transmission spectroscopy confirmed the presence of defect levels by applying Tauc calculations. The shunt resistance of the diode was calculated to be 25 kΩ through I-V curve tracer. Using electroluminescence spectroscopy, the emission of the fabricated LED was determined to be centered at 1.9 eV which is due to the presence of oxygen interstitial defects of the zinc oxide crystal.

Downloads

Issue

2016: Proceedings of the 34th Samahang Pisika ng Pilipinas Physics Conference

Article ID

SPP-2016-2A-07

Section

Optics and Photonics

Published

2016-08-18

How to Cite

[1]

A Tuico, L Lopez, A Salvador, E Estacio, and A Somintac, Red electroluminescence based on oxygen interstitial defects of annealed zinc oxide nanorods, Proceedings of the Samahang Pisika ng Pilipinas 34, SPP-2016-2A-07 (2016). URL: https://proceedings.spp-online.org/article/view/SPP-2016-2A-07.