Terahertz emission from Cu2O/PSi with Fabry-Perot mode at 800 nm
Abstract
We report on the terahertz (THz) emission of tuned Fabry-Perot mode at 800nm from PSi deposited with Cu2O thin film. PSi filmwas fabricated via electrochemical etching of highly doped p-type silicon. Porosity was measured using Reflectance spectroscopy. Cuprous Oxide(Cu2O) was deposited on the PSi via chemical bath deposition using Copper sulfate solution. The Fabry-Perot mode at 800nm was tuned by controlling the thickness of the Cu2O film. The most intense THz-TDS came from Cu2O/PSi sample with the maximum absorption at 800nm as shown in the reflectance results.