Determining the dominant THz mechanism of highly doped silicon by applying an external magnetic field in the THz-TDS set-up
Abstract
The dominant terahertz emission mechanism of highly doped silicon was determined by applying an external magnetic field of 0.65 T parallel to the surface of the sample. It was found via time-domain terahertz spectroscopy that with +0.65 and -0.65 T, a 14.49% increase and -3.71% decrease in terahertz emission was observed with almost no phase shift. Highly doped Si has a dominant surface field mechanism.
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Physics at the front and center: Strengthening core values in physics research
18–21 August 2016, University of the Philippines Visayas, Iloilo City
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