Determining the dominant THz mechanism of highly doped silicon by applying an external magnetic field in the THz-TDS set-up

Authors

Philippe Martin B. Tingzon ⋅ PH National Institute of Physics, University of the Philippines Diliman
Lorenzo Lopez, Jr. ⋅ PH Materials Science Engineering Program, University of the Philippines Diliman
Alexander De los Reyes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Joselito Muldera ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elmer Estacio ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

The dominant terahertz emission mechanism of highly doped silicon was determined by applying an external magnetic field of 0.65 T parallel to the surface of the sample. It was found via time-domain terahertz spectroscopy that with +0.65 and -0.65 T, a 14.49% increase and -3.71% decrease in terahertz emission was observed with almost no phase shift. Highly doped Si has a dominant surface field mechanism.

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Published

2016-08-18

Issue

2016: Proceedings of the 34th Samahang Pisika ng Pilipinas Physics Conference

Section

Optics and Photonics

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How to Cite

[1]

PMB Tingzon, L Lopez, A De los Reyes, J Muldera, A Salvador, E Estacio, and A Somintac, Determining the dominant THz mechanism of highly doped silicon by applying an external magnetic field in the THz-TDS set-up, in Proceedings of the 34th Samahang Pisika ng Pilipinas Physics Conference (Philippines, 2016), SPP-2016-2A-02. URL: https://proceedings.spp-online.org/article/view/SPP-2016-2A-02

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