Simulation of emission image pattern produced by CdSe/ZnS quantum dot using high NA objective lens

Authors

Lean L. Dasallas ⋅ PH National Institute of Physics, University of the Philippines Diliman
Maria Vanessa Balois ⋅ JP The Institute of Physical and Chemical Research RIKEN
Rafael Jaculbia ⋅ JP The Institute of Physical and Chemical Research RIKEN
Wilson O. Garcia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Norihiko Hayazawa ⋅ JP The Institute of Physical and Chemical Research RIKEN

Abstract

Emission image patterns taken from the back aperture plane of a high NA objective lens produced by a CdSe/ZnS quantum dot placed at the top and below the air-glass interface was simulated. The dependence of the emission image pattern on the distance of the quantum dot from interface was also investigated. Results showed that the emission image pattern depends on the distance of the quantum dot from the air-glass interface, orientation with respect to the sample plane, and the immediate environment of the quantum dot. The emission image patterns can be used to determine the three dimensional orientation of the CdSe/ZnS quantum dot with respect to the sample plane.

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Issue

2016: Proceedings of the 34th Samahang Pisika ng Pilipinas Physics Conference

Physics at the front and center: Strengthening core values in physics research
18–21 August 2016, University of the Philippines Visayas, Iloilo City

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SPP2016 Editorial Board
SPP2016 Partners and Sponsors

Article ID

SPP-2016-1A-06

Section

Instrumentation, Imaging, and Signal Processing

Published

2016-08-18

How to Cite

[1]

LL Dasallas, MV Balois, R Jaculbia, WO Garcia, and N Hayazawa, Simulation of emission image pattern produced by CdSe/ZnS quantum dot using high NA objective lens, Proceedings of the Samahang Pisika ng Pilipinas 34, SPP-2016-1A-06 (2016). URL: https://proceedings.spp-online.org/article/view/SPP-2016-1A-06.