Simulation of emission image pattern produced by CdSe/ZnS quantum dot using high NA objective lens
Abstract
Emission image patterns taken from the back aperture plane of a high NA objective lens produced by a CdSe/ZnS quantum dot placed at the top and below the air-glass interface was simulated. The dependence of the emission image pattern on the distance of the quantum dot from interface was also investigated. Results showed that the emission image pattern depends on the distance of the quantum dot from the air-glass interface, orientation with respect to the sample plane, and the immediate environment of the quantum dot. The emission image patterns can be used to determine the three dimensional orientation of the CdSe/ZnS quantum dot with respect to the sample plane.
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