Increased conductivity and distortion in Fe – doped BaBiO₃
Abstract
Insulating materials of pure and Fe-doped bulk samples of BaBi₁₋ₓFeₓO3 (x = 0, 0.10, 0.50) were produced through a conventional solid state reaction route. Doping of Fe in the Bi site of the parent material is found to increase the unit cell volume. The distortion angle, β decreases from 86.391(2)° to 86.389(8)° for x = 0 and 0.50, respectively. The resistance values of the 0.10 and 0.50 doped samples were found to be 1.069 MΩ and 0.1738 MΩ, respectively, indicating that introduction of Fe in BaBiO3 gradually decreases resistance.