Characterization of extremely thick macroporous silicon layer synthesized via electrochemical etching
Abstract
Extremely thick macroporous silicon layers were fabricated from n-type silicon (100) wafers by electrochemical etching in ethanoic solution of hydrofluoric acid. At constant anodization time and electrolytic concentration the effects of current density variation on porous silicon formation were investigated using scanning electron microscopy (SEM), x-ray diffraction (XRD) and photoluminescence (PL).
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Article ID
SPP-2010-6B-02
Section
Materials Physics
Published
2010-10-25
How to Cite
[1]
ROM Gonzales, RS Lopez, JJ Gimeno, RT Diocampo, NIF Cabello, AI Mabilangan, RG Dizon, and AS Somintac, Characterization of extremely thick macroporous silicon layer synthesized via electrochemical etching, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-6B-02 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-6B-02.