Characterization of extremely thick macroporous silicon layer synthesized via electrochemical etching
Abstract
Extremely thick macroporous silicon layers were fabricated from n-type silicon (100) wafers by electrochemical etching in ethanoic solution of hydrofluoric acid. At constant anodization time and electrolytic concentration the effects of current density variation on porous silicon formation were investigated using scanning electron microscopy (SEM), x-ray diffraction (XRD) and photoluminescence (PL).
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Strengthening physics research and education for a brighter tomorrow
25-27 October 2010, MERALCO Management and Leadership Development Center, Antipolo City