InAs quantum dots for photovoltaic cell application

Authors

H Molleda National Institute of Physics, University of the Philippines Diliman
JD Vasquez National Institute of Physics, University of the Philippines Diliman
Rafael Jaculbia National Institute of Physics, University of the Philippines Diliman
Michael Defensor National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

A baseline for the third generation photovoltaic technology at the National Institute of Physics was implemented at the Condensed Matter Physics Laboratory with the incorporation of quantum dots (QDs) nanostructure. Optimized growth parameters and QD evolution was determined by taking PL measurements of three QD samples grown at different Indium flux exposure. Presence of QDs inside the final layer for the device was confirmed by taking its photocurrent spectra and AFM image. Performance of the fabricated PV cell with incorporated QDs has shown an increase in quantum efficiencies in reference to the bulk heterostructure counterpart. Forward bias sweep without irradiance showed a higher dark current of p-i-n with dots as compared to the reference cell.

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Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2010-4B-06

Section

Materials Physics

Published

2010-10-25

How to Cite

[1]

H Molleda, J Vasquez, R Jaculbia, M Defensor, AS Somintac, and AA Salvador, InAs quantum dots for photovoltaic cell application, Proceedings of the Samahang Pisika ng Pilipinas 28, SPP-2010-4B-06 (2010). URL: https://proceedings.spp-online.org/article/view/SPP-2010-4B-06.