Multiple quantum structures as an active region for GaAs-based p-i-n photodetector

Authors

Jorge Michael Presto ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
John Daniel Vasquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

In this paper, 300K responsivity and dark current measurements of MBE grown p-n(AlGaAs), p-i-n(InGaAs MQW) and p-i-n(InAsQDs, InGaAs QW, GaAs QW) photodetectors prepared on n+-GaAs substrate are presented. Maximum responsivity of 1.0 A/W at 880nm wavelength and absorption range extending to 1,170nm were observed for p-i-n sample with multiple quantum structures as the active region. Significant reduction on the dark current was also observed by inserting an AlGaAs blocking layer within the active region of p-i-n photodetector.

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Published

2010-10-25

Issue

2010: Proceedings of the 28th Samahang Pisika ng Pilipinas Physics Congress

Section

Materials Physics

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How to Cite

[1]

“Multiple quantum structures as an active region for GaAs-based p-i-n photodetector”, Proc. SPP, vol. 28, no. 1, pp. SPP–2010, Oct. 2010, Accessed: Apr. 01, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2010-1C-01