Self-consistent simulation of a δ-doped pseudomorphic high electron transistor (pHEMT) via a semi-analytical technique

Authors

  • Jennifer Anne S. Constantino ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

This paper describes the self-consistent calculation of the energy levels and eigenstates of a delta-doped pHEMT structure via a semi-analytical technique. To test the method, it is used to simulate a GaAs/InGaAs/GaAs pHEMT. Resulting calculated sheet channel concentration data versus spacer layer thickness show agreement with the reference experimental data.

SPP 2009 Proceedings Cover

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Published

2009-10-28

Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Section

Semiconductor Physics

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How to Cite

[1]
“Self-consistent simulation of a δ-doped pseudomorphic high electron transistor (pHEMT) via a semi-analytical technique”, Proc. SPP, vol. 27, no. 1, pp. SPP–2009, Oct. 2009, Accessed: Apr. 05, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2009-4B-04