Self-consistent simulation of a δ-doped pseudomorphic high electron transistor (pHEMT) via a semi-analytical technique

Authors

Jennifer Anne S. Constantino ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

This paper describes the self-consistent calculation of the energy levels and eigenstates of a delta-doped pHEMT structure via a semi-analytical technique. To test the method, it is used to simulate a GaAs/InGaAs/GaAs pHEMT. Resulting calculated sheet channel concentration data versus spacer layer thickness show agreement with the reference experimental data.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Scouting the grand vista: From curiosity-driven research to real world application

28-30 October 2009, Development Academy of the Philippines Convention Center, Tagaytay City

Article ID

SPP-2009-4B-04

Section

Semiconductor Physics

Published

2009-10-28

How to Cite

[1]

JAS Constantino, MJ Defensor, and AA Salvador, Self-consistent simulation of a δ-doped pseudomorphic high electron transistor (pHEMT) via a semi-analytical technique, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-4B-04 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-4B-04.