Self-consistent simulation of a δ-doped pseudomorphic high electron transistor (pHEMT) via a semi-analytical technique

Authors

Jennifer Anne S. Constantino National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

This paper describes the self-consistent calculation of the energy levels and eigenstates of a delta-doped pHEMT structure via a semi-analytical technique. To test the method, it is used to simulate a GaAs/InGaAs/GaAs pHEMT. Resulting calculated sheet channel concentration data versus spacer layer thickness show agreement with the reference experimental data.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-4B-04

Section

Semiconductor Physics

Published

2009-10-28

How to Cite

[1]

JAS Constantino, MJ Defensor, and AA Salvador, Self-consistent simulation of a δ-doped pseudomorphic high electron transistor (pHEMT) via a semi-analytical technique, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-4B-04 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-4B-04.