Fabrication and low frequency characterization of n-In_xAl_{1- x}As/In_yGa_1-yAs metamorphic HEMT on GaAs substrate

Authors

Jonathan D. Azares ⋅ PH National Institute of Physics, University of the Philippines Diliman
Fritz Christian B. Awitan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Karim M. Omambac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jasher John Ibanes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We demonstrate the fabrication and low frequency characterization of n-In_xAl_1-xAs/In_yGa_1-yAs Metamorphic HEMT on GaAs substrate. A 20um gate length fabricated MHEMT device operating in depletion mode exhibit a maximum drain current I_max ~ 11.31mA/mm, maximum extrinsic transconductance gain g_m~5.43mS/mm and threshold voltage V_T ~-3V. This is a proof that metamorphic HEMT on GaAs substrate is possible.

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Published

2009-10-28

Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Section

Semiconductor Physics

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How to Cite

[1]

“Fabrication and low frequency characterization of n-InxAl1- xAs/InyGa1-yAs metamorphic HEMT on GaAs substrate”, Proc. SPP, vol. 27, no. 1, pp. SPP–2009, Oct. 2009, Accessed: Apr. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2009-4B-03