Fabrication and low frequency characterization of n-In_xAl_{1- x}As/In_yGa_1-yAs metamorphic HEMT on GaAs substrate

Authors

Jonathan D. Azares ⋅ PH National Institute of Physics, University of the Philippines Diliman
Fritz Christian B. Awitan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Karim M. Omambac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jasher John Ibanes ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We demonstrate the fabrication and low frequency characterization of n-In_xAl_1-xAs/In_yGa_1-yAs Metamorphic HEMT on GaAs substrate. A 20um gate length fabricated MHEMT device operating in depletion mode exhibit a maximum drain current I_max ~ 11.31mA/mm, maximum extrinsic transconductance gain g_m~5.43mS/mm and threshold voltage V_T ~-3V. This is a proof that metamorphic HEMT on GaAs substrate is possible.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Scouting the grand vista: From curiosity-driven research to real world application

28-30 October 2009, Development Academy of the Philippines Convention Center, Tagaytay City

Article ID

SPP-2009-4B-03

Section

Semiconductor Physics

Published

2009-10-28

How to Cite

[1]

JD Azares, FCB Awitan, KM Omambac, JJ Ibanes, MJ Defensor, AS Somintac, and AA Salvador, Fabrication and low frequency characterization of n-InxAl1- xAs/InyGa1-yAs metamorphic HEMT on GaAs substrate, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-4B-03 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-4B-03.