Fabrication and low frequency characterization of n-In_xAl_{1- x}As/In_yGa_1-yAs metamorphic HEMT on GaAs substrate

Authors

Jonathan D. Azares National Institute of Physics, University of the Philippines Diliman
Fritz Christian B. Awitan National Institute of Physics, University of the Philippines Diliman
Karim M. Omambac National Institute of Physics, University of the Philippines Diliman
Jasher John Ibanes National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

We demonstrate the fabrication and low frequency characterization of n-In_xAl_1-xAs/In_yGa_1-yAs Metamorphic HEMT on GaAs substrate. A 20um gate length fabricated MHEMT device operating in depletion mode exhibit a maximum drain current I_max ~ 11.31mA/mm, maximum extrinsic transconductance gain g_m~5.43mS/mm and threshold voltage V_T ~-3V. This is a proof that metamorphic HEMT on GaAs substrate is possible.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-4B-03

Section

Semiconductor Physics

Published

2009-10-28

How to Cite

[1]

JD Azares, FCB Awitan, KM Omambac, JJ Ibanes, MJ Defensor, AS Somintac, and AA Salvador, Fabrication and low frequency characterization of n-InxAl1- xAs/InyGa1-yAs metamorphic HEMT on GaAs substrate, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-4B-03 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-4B-03.