Influence of growth temperature on the photoluminescence of zinc oxide thin film synthesized through the horizontal vapor phase crystal growth method

Authors

Alvin Noe Ladines Solid State Physics Laboratory, De La Salle University
Gil Nonato Santos Solid State Physics Laboratory, De La Salle University
Reuben Quiroga Solid State Physics Laboratory, De La Salle University

Abstract

This study investigates the effect of growth temperature on the photoluminescence (PL) spectra of zinc oxide (ZnO) thin film deposited on glass substrate via the horizontal vapor phase crystal growth method (HVPCG). XRD analysis reveals the hexagonal wurtzite structure of the grown ZnO films with growth orientation in the (002) and (101) directions. The room temperature PL spectra of the samples show green emission centered at 510 nm. The strong green emission is caused by antisite oxygen defects in the film.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-3B-01

Section

Optical Devices

Published

2009-10-28

How to Cite

[1]

AN Ladines, GN Santos, and R Quiroga, Influence of growth temperature on the photoluminescence of zinc oxide thin film synthesized through the horizontal vapor phase crystal growth method, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-3B-01 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-3B-01.