Ultraviolet photoconductive detector using CeF₃ thin film grown by pulsed laser deposition

Authors

Kazutoshi Tabata ⋅ JP Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi
Yo Ichikawa ⋅ JP Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi
Shingo Ono ⋅ JP Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi
Kentaro Fukuda ⋅ JP Tokuyama Corporation Shibuya
Toshihisa Suyama ⋅ JP Tokuyama Corporation Shibuya
Yuui Yokota ⋅ JP Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
Takayuki Yanagida ⋅ JP Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
Akira Yoshikawa ⋅ JP Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

Abstract

We report on a photoconductive detector for the ultraviolet region based on CeF₃ thin films. The CeF₃ thin films were grown by pulsed laser deposition. The spectral response of the detector was measured and it is shown that the detector’s sensitivity extends below 310 nm.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-2B-05

Section

Optical Devices

Published

2009-10-28

How to Cite

[1]

K Tabata, Y Ichikawa, S Ono, K Fukuda, T Suyama, Y Yokota, T Yanagida, and A Yoshikawa, Ultraviolet photoconductive detector using CeF₃ thin film grown by pulsed laser deposition, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-2B-05 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-2B-05.