Ultraviolet photoconductive detector using CeF₃ thin film grown by pulsed laser deposition

Authors

  • Kazutoshi Tabata ⋅ JP Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi
  • Yo Ichikawa ⋅ JP Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi
  • Shingo Ono ⋅ JP Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi
  • Kentaro Fukuda ⋅ JP Tokuyama Corporation Shibuya
  • Toshihisa Suyama ⋅ JP Tokuyama Corporation Shibuya
  • Yuui Yokota ⋅ JP Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
  • Takayuki Yanagida ⋅ JP Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
  • Akira Yoshikawa ⋅ JP Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

Abstract

We report on a photoconductive detector for the ultraviolet region based on CeF₃ thin films. The CeF₃ thin films were grown by pulsed laser deposition. The spectral response of the detector was measured and it is shown that the detector’s sensitivity extends below 310 nm.

SPP 2009 Proceedings Cover

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Published

2009-10-28

Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Section

Optical Devices

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How to Cite

[1]
“Ultraviolet photoconductive detector using CeF₃ thin film grown by pulsed laser deposition”, Proc. SPP, vol. 27, no. 1, pp. SPP–2009, Oct. 2009, Accessed: Apr. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2009-2B-05