Ultraviolet photoconductive detector using CeF₃ thin film grown by pulsed laser deposition

Authors

Kazutoshi Tabata Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi
Yo Ichikawa Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi
Shingo Ono Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya, Aichi
Kentaro Fukuda Tokuyama Corporation Shibuya
Toshihisa Suyama Tokuyama Corporation Shibuya
Yuui Yokota Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
Takayuki Yanagida Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
Akira Yoshikawa Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

Abstract

We report on a photoconductive detector for the ultraviolet region based on CeF₃ thin films. The CeF₃ thin films were grown by pulsed laser deposition. The spectral response of the detector was measured and it is shown that the detector’s sensitivity extends below 310 nm.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-2B-05

Section

Optical Devices

Published

2009-10-28

How to Cite

[1]

K Tabata, Y Ichikawa, S Ono, K Fukuda, T Suyama, Y Yokota, T Yanagida, and A Yoshikawa, Ultraviolet photoconductive detector using CeF₃ thin film grown by pulsed laser deposition, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-2B-05 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-2B-05.