Optical and electrical characterization of a high electron mobility transistor (HEMT) structure grown on gallium antimonide (GaSb) substrate

Authors

Elizabeth Ann P. Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
Cyril P. Sadia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael B. Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Mae Agatha C. Tumanguil ⋅ PH National Institute of Physics, University of the Philippines Diliman
Carlos F. Baldo ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

High electron mobility transistor (HEMT) structure was grown on GaSb substrate via molecular beam epitaxy to test the effectiveness of an AlAs/GaAs superlattice in suppressing dislocations in lattice-mismatched heterostructures. Optical and electrical characterization was performed to ascertain the quality of the grown HEMT structure given its 8% latticemismatch with the substrate. High resolution x-ray diffraction measurement showed a narrower full width at half maximum (FWHM) of 0.643deg in the grown HEMT structure on GaSb as compared with the previously grown GaAs on GaSb with FWHM of 0.886deg suggesting a decrease in sample dislocations. Photoluminescence spectroscopy at 10K of the grown HEMT structure on GaSb showed a 1.514eV GaAs band-to-band transition with full width at half maximum (FWHM) of 4meV indicative of a relaxed epilayer. Optical response of the fabricated sample on the other hand, verified the presence of the HEMT channel affirming the successful growth of the HEMT structure on GaSb. An increase in the drain saturation current from 60µm to 0.5mA was observed as the fabricated sample was illuminated.

Downloads

Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-2B-04

Section

Optical Devices

Published

2009-10-28

How to Cite

[1]

EAP Prieto, CP Sadia, RB Jaculbia, MAC Tumanguil, CF Baldo, AS Somintac, and AA Salvador, Optical and electrical characterization of a high electron mobility transistor (HEMT) structure grown on gallium antimonide (GaSb) substrate, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-2B-04 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-2B-04.