Nanowire formation on (100)-oriented gallium antimonide substrates

Authors

  • Cyril P. Sadia ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Elizabeth Ann P. Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Jeremy G. Porquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Karim M. Omambac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Gallium arsenide (GaAs) nanowires were formed on (100)-oriented gallium antimonide (GaSb) substrates through molecular beam epitaxy (MBE) using only elemental gallium and arsenic. Scanning Electron Microscopy (SEM) reveals nanowires that are 3.81-5.86 μm long with diameter in the range 458-900 nm. SEM also shows the nanowires originate from craters on the gallium arsenide surface.

SPP 2009 Proceedings Cover

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Published

2009-10-28

Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Section

Nanomaterials

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How to Cite

[1]
“Nanowire formation on (100)-oriented gallium antimonide substrates”, Proc. SPP, vol. 27, no. 1, pp. SPP–2009, Oct. 2009, Accessed: Apr. 02, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2009-1B-05