Nanowire formation on (100)-oriented gallium antimonide substrates

Authors

Cyril P. Sadia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann P. Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jeremy G. Porquez ⋅ PH National Institute of Physics, University of the Philippines Diliman
Karim M. Omambac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Gallium arsenide (GaAs) nanowires were formed on (100)-oriented gallium antimonide (GaSb) substrates through molecular beam epitaxy (MBE) using only elemental gallium and arsenic. Scanning Electron Microscopy (SEM) reveals nanowires that are 3.81-5.86 μm long with diameter in the range 458-900 nm. SEM also shows the nanowires originate from craters on the gallium arsenide surface.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-1B-05

Section

Nanomaterials

Published

2009-10-28

How to Cite

[1]

CP Sadia, EAP Prieto, JG Porquez, KM Omambac, AS Somintac, and AA Salvador, Nanowire formation on (100)-oriented gallium antimonide substrates, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-1B-05 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-1B-05.