Nanowire formation on (100)-oriented gallium antimonide substrates
Abstract
Gallium arsenide (GaAs) nanowires were formed on (100)-oriented gallium antimonide (GaSb) substrates through molecular beam epitaxy (MBE) using only elemental gallium and arsenic. Scanning Electron Microscopy (SEM) reveals nanowires that are 3.81-5.86 μm long with diameter in the range 458-900 nm. SEM also shows the nanowires originate from craters on the gallium arsenide surface.
Downloads
Issue
Scouting the grand vista: From curiosity-driven research to real world application
28-30 October 2009, Development Academy of the Philippines Convention Center, Tagaytay City