Nanowire formation on (100)-oriented gallium antimonide substrates

Authors

Cyril P. Sadia National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann P. Prieto National Institute of Physics, University of the Philippines Diliman
Jeremy G. Porquez National Institute of Physics, University of the Philippines Diliman
Karim M. Omambac National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Gallium arsenide (GaAs) nanowires were formed on (100)-oriented gallium antimonide (GaSb) substrates through molecular beam epitaxy (MBE) using only elemental gallium and arsenic. Scanning Electron Microscopy (SEM) reveals nanowires that are 3.81-5.86 μm long with diameter in the range 458-900 nm. SEM also shows the nanowires originate from craters on the gallium arsenide surface.

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Issue

2009: Proceedings of the 27th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2009-1B-05

Section

Nanomaterials

Published

2009-10-28

How to Cite

[1]

CP Sadia, EAP Prieto, JG Porquez, KM Omambac, AS Somintac, and AA Salvador, Nanowire formation on (100)-oriented gallium antimonide substrates, Proceedings of the Samahang Pisika ng Pilipinas 27, SPP-2009-1B-05 (2009). URL: https://proceedings.spp-online.org/article/view/SPP-2009-1B-05.