Fabrication of Si nanopillars via Ni-nanoclusters and reactive ion etching
Abstract
Silicon nanopillars with height of 1100 nm and width of 300 nm were fabricated using Ni-nanoclusters as masks. The Ni film was deposited via e beam evaporation. Nanoclusters with average size of 100 nm were achieved by annealing at various times. The effects of different parameters like gas flow rate and Ni mask size on anisotropy and aspect ratio of the pillars were investigated.
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Taking physics to the summit
22-24 October 2008, University of the Philippines Baguio, Baguio City