Fabrication of Si nanopillars via Ni-nanoclusters and reactive ion etching

Authors

Rhona Olivia M. Gonzales National Institute of Physics, University of the Philippines Diliman
Rengie Mark D. Mailig National Institute of Physics, University of the Philippines Diliman
Ramon M. delos Santos National Institute of Physics, University of the Philippines Diliman
Jeremy G. Porquez National Institute of Physics, University of the Philippines Diliman
Jorge Michael M. Presto National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Silicon nanopillars with height of 1100 nm and width of 300 nm were fabricated using Ni-nanoclusters as masks. The Ni film was deposited via e beam evaporation. Nanoclusters with average size of 100 nm were achieved by annealing at various times. The effects of different parameters like gas flow rate and Ni mask size on anisotropy and aspect ratio of the pillars were investigated.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-PA-26

Section

Poster Session A (Materials, Optical, and Plasma Physics)

Published

2008-10-22

How to Cite

[1]

ROM Gonzales, RMD Mailig, RM delos Santos, JG Porquez, JMM Presto, AA Salvador, and AS Somintac, Fabrication of Si nanopillars via Ni-nanoclusters and reactive ion etching, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-PA-26 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-PA-26.