Characterization of n-In_xAl_1-xAs/In_yGa_1-yAs metamorphic high electron mobility transistors (MHEMTs) on GaAs

Authors

Jonathan D. Azares National Institute of Physics, University of the Philippines Diliman
Elizabeth Ann P. Prieto National Institute of Physics, University of the Philippines Diliman
Rafael B. Jaculbia National Institute of Physics, University of the Philippines Diliman
John Silverio F. Saligbon Department of Physical Sciences, University of the Philippines Baguio
Jasher John A. Ibañes National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

We report the characterization of the first attempt of an n-In_xAl_1-xAs/In_yGa_1-yAs metamorphic high electron mobility transistor (MHEMT) on GaAs substrate grown via Molecular Beam Epitaxy. We used an Indium graded InGaAs metamorphic buffer layer for strain relaxation. The Hall Effect measurements indicate sheet carrier densities of 5.3x10¹²cm^-2, 4.21x10¹²cm^-2, and 4.25x10¹²cm^-2 with associated mobilities of 1,834 cm²/Vs, 3,328 cm²/Vs, and 3,946 cm²/Vs at room temperature, 77K, and 10K respectively. Photoluminescence confirms the occurrence of the InGaAs channel layer in the sample. We attribute the low mobility to the low indium content of 12% in the InGaAs channel and graded buffer layers.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-PA-11

Section

Poster Session A (Materials, Optical, and Plasma Physics)

Published

2008-10-22

How to Cite

[1]

JD Azares, EAP Prieto, RB Jaculbia, JSF Saligbon, JJA Ibañes, MJ Defensor, A Somintac, and AA Salvador, Characterization of n-InxAl1-xAs/InyGa1-yAs metamorphic high electron mobility transistors (MHEMTs) on GaAs, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-PA-11 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-PA-11.