Characterization of n-InxAl1-xAs/InyGa1-yAs metamorphic high electron mobility transistors (MHEMTs) on GaAs
Abstract
We report the characterization of the first attempt of an n-InxAl1-xAs/InyGa1-yAs metamorphic high electron mobility transistor (MHEMT) on GaAs substrate grown via Molecular Beam Epitaxy. We used an Indium graded InGaAs metamorphic buffer layer for strain relaxation. The Hall Effect measurements indicate sheet carrier densities of 5.3x1012 cm-2, 4.21x1012 cm-2, and 4.25x1012 cm-2 with associated mobilities of 1,834 cm2/Vs, 3,328 cm2/Vs, and 3,946 cm2/Vs at room temperature, 77K, and 10K respectively. Photoluminescence confirms the occurrence of the InGaAs channel layer in the sample. We attribute the low mobility to the low indium content of 12% in the InGaAs channel and graded buffer layers.