Gold electrochemical plating process using sulfite based electrolyte for semiconductor device fabrication

Authors

Jonathan D. Azares National Institute of Physics, University of the Philippines Diliman
Fritz Christian B. Awitan National Institute of Physics, University of the Philippines Diliman
Jeremy G. Porquez National Institute of Physics, University of the Philippines Diliman
Jennifer Anne S. Constantino National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

We demonstrate the gold electrochemical plating process incorporated in the fabrication of semiconductor devices like inductors, capacitors and transistors necessary for RF applications. The average plating rate of our Au-electrochemical plating set-up is around 25.77x10⁶ μm/[(A/μm²)s]. We have successfully plated thick contact pads for capacitors and inductors as well as gate metals for transistors. The plated gold metal has a bright color, smooth interface without rabbit ears and cracks and consistent with the calculated plating rate.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-PA-10

Section

Poster Session A (Materials, Optical, and Plasma Physics)

Published

2008-10-22

How to Cite

[1]

JD Azares, FCB Awitan, JG Porquez, JAS Constantino, MJ Defensor, A Somintac, and AA Salvador, Gold electrochemical plating process using sulfite based electrolyte for semiconductor device fabrication, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-PA-10 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-PA-10.