Synthesis of anodic aluminum oxide (AAO) from aluminum thin film deposited via RF magnetron sputtering
Abstract
Anodic Aluminum Oxide (AAO) was synthesized by anodizing thin film aluminum, with thickness of approximately 200nm, deposited on a silicon substrate via RF magnetron sputtering. Two-step anodization process using 0.3 Molar oxalic acid solution at applied potential of 40 volts was able to show high nanopore density and nearly ordered nanopore arrangement. Etching time with 5% phosphoric acid was varied in order to control nanopore diameter. The morphologic and physical characterizations of the alumina film samples were carried out by Scanning Electron Microscope (SEM).
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Taking physics to the summit
22-24 October 2008, University of the Philippines Baguio, Baguio City