Synthesis of anodic aluminum oxide (AAO) from aluminum thin film deposited via RF magnetron sputtering

Authors

  • Rogelio G. Dizon National Institute of Physics, University of the Philippines Diliman
  • Regine A. Loberternos National Institute of Physics, University of the Philippines Diliman
  • Joel P. Bugne Department of Physical Sciences, University of the Philippines Baguio
  • Dona May O. Taguba Department of Physical Sciences, University of the Philippines Baguio
  • Olive Ann Jennifer T. Valdez Department of Physical Sciences, University of the Philippines Baguio
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman

Abstract

Anodic Aluminum Oxide (AAO) was synthesized by anodizing thin film aluminum, with thickness of approximately 200nm, deposited on a silicon substrate via RF magnetron sputtering. Two-step anodization process using 0.3 Molar oxalic acid solution at applied potential of 40 volts was able to show high nanopore density and nearly ordered nanopore arrangement. Etching time with 5% phosphoric acid was varied in order to control nanopore diameter. The morphologic and physical characterizations of the alumina film samples were carried out by Scanning Electron Microscope (SEM).

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Issue

Article ID

SPP-2008-PA-07

Section

Poster Session A (Materials, Optical, and Plasma Physics)

Published

2008-10-22

How to Cite

[1]
RG Dizon, RA Loberternos, JP Bugne, DMO Taguba, OAJT Valdez, and AS Somintac, Synthesis of anodic aluminum oxide (AAO) from aluminum thin film deposited via RF magnetron sputtering, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-PA-07 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-PA-07.