Optical characterization of MBE grown GaAs nanowires on Si(111) via photoluminescence and Raman spectroscopy

Authors

  • Rafael B. Jaculbia National Institute of Physics, University of the Philippines Diliman
  • Ramon M. delos Santos National Institute of Physics, University of the Philippines Diliman
  • Michael J. Defensor National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Room temperature Raman and Photoluminescence (PL) spectroscopy was performed on Gallium Arsenide (GaAs) Nanowires grown via Gold (Au)–assisted Molecular Beam Epitaxy (MBE) on Si(111) substrates, utilizing the Vapor-Liquid- Solid (VLS) mechanism. Three different samples with varying nanowire diameters were characterized. Raman spectra showed the presence of GaAs LO and TO phonon modes for all samples. Increasing the diameter of the NWs casuses a downshift in the position of TO modes while LO modes do not shift. Blue-shifts with respect to bulk GaAs was observed in the PL spectra of the NWs suggesting a weak confinement effect.

SPP 2008 Proceedings Cover

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Published

2008-10-22

Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Section

Materials Physics

License

By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Optical characterization of MBE grown GaAs nanowires on Si(111) via photoluminescence and Raman spectroscopy”, Proc. SPP, vol. 26, no. 1, pp. SPP–2008, Oct. 2008, Accessed: Mar. 30, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2008-5A-03