Optical characterization of MBE grown GaAs nanowires on Si(111) via photoluminescence and Raman spectroscopy

Authors

Rafael B. Jaculbia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Ramon M. delos Santos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Room temperature Raman and Photoluminescence (PL) spectroscopy was performed on Gallium Arsenide (GaAs) Nanowires grown via Gold (Au)–assisted Molecular Beam Epitaxy (MBE) on Si(111) substrates, utilizing the Vapor-Liquid- Solid (VLS) mechanism. Three different samples with varying nanowire diameters were characterized. Raman spectra showed the presence of GaAs LO and TO phonon modes for all samples. Increasing the diameter of the NWs casuses a downshift in the position of TO modes while LO modes do not shift. Blue-shifts with respect to bulk GaAs was observed in the PL spectra of the NWs suggesting a weak confinement effect.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-5A-03

Section

Materials Physics

Published

2008-10-22

How to Cite

[1]

RB Jaculbia, RM delos Santos, MJ Defensor, AS Somintac, and AA Salvador, Optical characterization of MBE grown GaAs nanowires on Si(111) via photoluminescence and Raman spectroscopy, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-5A-03 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-5A-03.