Production of nanodot structure in silicon (100) substrate by low energy reactive ion bombardment

Authors

  • Adonis Flores ⋅ PH National Institute of Physics, University of the Philippines Diliman and Department of Physics, University of San Carlos
  • Giovanni Malapit ⋅ PH National Institute of Physics, University of the Philippines Diliman and Department of Physical Sciences, University of the Philippines Baguio
  • Regine Loberternos ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Gene Blantocas ⋅ PH National Institute of Physics, University of the Philippines Diliman
  • Henry Ramos ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We present result on the formation of nanodot structures on a silicon substrate by reactive ion bombardment. Reactive ions and radicals are produced using a low energy gas discharge ion source (GDIS) plasma device. Sizes of the dots formed are in the range [30-300] nm. These are comparable to the results produced via argon ion sputtering.

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Published

2008-10-22

Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Section

Materials Physics

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How to Cite

[1]
A Flores, G Malapit, R Loberternos, G Blantocas, and H Ramos, Production of nanodot structure in silicon (100) substrate by low energy reactive ion bombardment, in Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress (Philippines, 2008), SPP-2008-2A-03. URL: https://proceedings.spp-online.org/article/view/SPP-2008-2A-03
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