Production of nanodot structure in silicon (100) substrate by low energy reactive ion bombardment
Abstract
We present result on the formation of nanodot structures on a silicon substrate by reactive ion bombardment. Reactive ions and radicals are produced using a low energy gas discharge ion source (GDIS) plasma device. Sizes of the dots formed are in the range [30-300] nm. These are comparable to the results produced via argon ion sputtering.
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