Production of nanodot structure in silicon (100) substrate by low energy reactive ion bombardment

Authors

Adonis Flores National Institute of Physics, University of the Philippines Diliman and Department of Physics, University of San Carlos
Giovanni Malapit National Institute of Physics, University of the Philippines Diliman and Department of Physical Sciences, University of the Philippines Baguio
Regine Loberternos National Institute of Physics, University of the Philippines Diliman
Gene Blantocas National Institute of Physics, University of the Philippines Diliman
Henry Ramos National Institute of Physics, University of the Philippines Diliman

Abstract

We present result on the formation of nanodot structures on a silicon substrate by reactive ion bombardment. Reactive ions and radicals are produced using a low energy gas discharge ion source (GDIS) plasma device. Sizes of the dots formed are in the range [30-300] nm. These are comparable to the results produced via argon ion sputtering.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-2A-03

Section

Materials Physics

Published

2008-10-22

How to Cite

[1]

A Flores, G Malapit, R Loberternos, G Blantocas, and H Ramos, Production of nanodot structure in silicon (100) substrate by low energy reactive ion bombardment, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-2A-03 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-2A-03.