Production of nanodot structure in silicon (100) substrate by low energy reactive ion bombardment

Authors

Adonis Flores ⋅ PH National Institute of Physics, University of the Philippines Diliman and Department of Physics, University of San Carlos
Giovanni Malapit ⋅ PH National Institute of Physics, University of the Philippines Diliman and Department of Physical Sciences, University of the Philippines Baguio
Regine Loberternos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Gene Blantocas ⋅ PH National Institute of Physics, University of the Philippines Diliman
Henry Ramos ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We present result on the formation of nanodot structures on a silicon substrate by reactive ion bombardment. Reactive ions and radicals are produced using a low energy gas discharge ion source (GDIS) plasma device. Sizes of the dots formed are in the range [30-300] nm. These are comparable to the results produced via argon ion sputtering.

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Issue

2008: Proceedings of the 26th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2008-2A-03

Section

Materials Physics

Published

2008-10-22

How to Cite

[1]

A Flores, G Malapit, R Loberternos, G Blantocas, and H Ramos, Production of nanodot structure in silicon (100) substrate by low energy reactive ion bombardment, Proceedings of the Samahang Pisika ng Pilipinas 26, SPP-2008-2A-03 (2008). URL: https://proceedings.spp-online.org/article/view/SPP-2008-2A-03.