Current-voltage measurement of high electron mobility transistor under illumination
Abstract
We investigated the effect of illumination on a high electron mobility transistor. From its current-voltage behavior, it was observed that under illumination the device saturated at lower VDS = 3.5 V compared to the VDS = 4.2 V when not illuminated. This was attributed to the electrons from the valence band that were promoted to the GaAs channel. Results showed that with illumination, absorption of light increases the current of the HEMT sample.
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Issue
Physics: Key to understanding nature
Liknayan: Susi sa pagtuklas ng kalikasan
24-26 October 2007, University of the Philippines Los BaƱos, Laguna