Current-voltage measurement of high electron mobility transistor under illumination

Authors

  • Elizabeth P. Prieto National Institute of Physics, University of the Philippines Diliman
  • Michael J. Defensor National Institute of Physics, University of the Philippines Diliman
  • Carlos F. Baldo III National Institute of Physics, University of the Philippines Diliman
  • Rafael B. Jacul National Institute of Physics, University of the Philippines Diliman
  • Armando S. Somintac National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

We investigated the effect of illumination on a high electron mobility transistor. From its current-voltage behavior, it was observed that under illumination the device saturated at lower VDS = 3.5 V compared to the VDS = 4.2 V when not illuminated. This was attributed to the electrons from the valence band that were promoted to the GaAs channel. Results showed that with illumination, absorption of light increases the current of the HEMT sample.

SPP 2007 Proceedings Cover

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Published

2007-10-24

Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Section

Poster Session PB

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Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Current-voltage measurement of high electron mobility transistor under illumination”, Proc. SPP, vol. 25, no. 1, p. SPP-2007-PB-08, Oct. 2007, Accessed: Mar. 25, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2007-PB-08