Current-voltage measurement of high electron mobility transistor under illumination

Authors

Elizabeth P. Prieto ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Carlos F. Baldo III ⋅ PH National Institute of Physics, University of the Philippines Diliman
Rafael B. Jacul ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando S. Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

We investigated the effect of illumination on a high electron mobility transistor. From its current-voltage behavior, it was observed that under illumination the device saturated at lower V_DS = 3.5 V compared to the V_DS = 4.2 V when not illuminated. This was attributed to the electrons from the valence band that were promoted to the GaAs channel. Results showed that with illumination, absorption of light increases the current of the HEMT sample.

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Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2007-PB-08

Section

Poster Session PB

Published

2007-10-24

How to Cite

[1]

EP Prieto, MJ Defensor, CF Baldo, RB Jacul, AS Somintac, and AA Salvador, Current-voltage measurement of high electron mobility transistor under illumination, Proceedings of the Samahang Pisika ng Pilipinas 25, SPP-2007-PB-08 (2007). URL: https://proceedings.spp-online.org/article/view/SPP-2007-PB-08.