Fabrication and characterization of delta-doped InGaAs pseudomorphic high electron mobility transistor

Authors

Carlos F. Baldo III ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jennifer Anne S. Constantino ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Flo Rykiel M. Ramos ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

InGaAs delta-doped pseudomorphic High-Electron Mobility Transistor was fabricated from MBE-grown InGaAs delta-doped pseudomorphic Modulation-doped Heterostructure. At T = 11 K, mobility of 16300 cm²/Vs was obtained by doing Hall measurement on the delta-doped sample, which was significantly large compared to 9700 cm²/Vs obtained on a uniformly-doped sample. This was attributed to reduced ionized impurity scattering in the delta-doped sample that enhances the speed of the carriers in the channel. By I-V measurement, the fabricated device was found to operate in depletion mode with a maximum drain current 12.8 µA at zero gate bias.

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Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2007-3A-03

Section

Condensed Matter Physics

Published

2007-10-24

How to Cite

[1]

CF Baldo, JAS Constantino, MJ Defensor, FRM Ramos, and AA Salvador, Fabrication and characterization of delta-doped InGaAs pseudomorphic high electron mobility transistor, Proceedings of the Samahang Pisika ng Pilipinas 25, SPP-2007-3A-03 (2007). URL: https://proceedings.spp-online.org/article/view/SPP-2007-3A-03.