Fabrication and characterization of delta-doped InGaAs pseudomorphic high electron mobility transistor

Authors

  • Carlos F. Baldo III National Institute of Physics, University of the Philippines Diliman
  • Jennifer Anne S. Constantino National Institute of Physics, University of the Philippines Diliman
  • Michael J. Defensor National Institute of Physics, University of the Philippines Diliman
  • Flo Rykiel M. Ramos National Institute of Physics, University of the Philippines Diliman
  • Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

InGaAs delta-doped pseudomorphic High-Electron Mobility Transistor was fabricated from MBE-grown InGaAs delta-doped pseudomorphic Modulation-doped Heterostructure. At T = 11 K, mobility of 16300 cm2/Vs was obtained by doing Hall measurement on the delta-doped sample, which was significantly large compared to 9700 cm2/Vs obtained on a uniformly-doped sample. This was attributed to reduced ionized impurity scattering in the delta-doped sample that enhances the speed of the carriers in the channel. By I-V measurement, the fabricated device was found to operate in depletion mode with a maximum drain current 12.8 µA at zero gate bias.

SPP 2007 Proceedings Cover

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Published

2007-10-24

Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Section

Condensed Matter Physics

License

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All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Fabrication and characterization of delta-doped InGaAs pseudomorphic high electron mobility transistor”, Proc. SPP, vol. 25, no. 1, pp. SPP–2007, Oct. 2007, Accessed: Mar. 26, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2007-3A-03