Fabrication and characterization of delta-doped InGaAs pseudomorphic high electron mobility transistor

Authors

Carlos F. Baldo III National Institute of Physics, University of the Philippines Diliman
Jennifer Anne S. Constantino National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor National Institute of Physics, University of the Philippines Diliman
Flo Rykiel M. Ramos National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

InGaAs delta-doped pseudomorphic High-Electron Mobility Transistor was fabricated from MBE-grown InGaAs delta-doped pseudomorphic Modulation-doped Heterostructure. At T = 11 K, mobility of 16300 cm²/Vs was obtained by doing Hall measurement on the delta-doped sample, which was significantly large compared to 9700 cm²/Vs obtained on a uniformly-doped sample. This was attributed to reduced ionized impurity scattering in the delta-doped sample that enhances the speed of the carriers in the channel. By I-V measurement, the fabricated device was found to operate in depletion mode with a maximum drain current 12.8 µA at zero gate bias.

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Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2007-3A-03

Section

Condensed Matter Physics

Published

2007-10-24

How to Cite

[1]

CF Baldo, JAS Constantino, MJ Defensor, FRM Ramos, and AA Salvador, Fabrication and characterization of delta-doped InGaAs pseudomorphic high electron mobility transistor, Proceedings of the Samahang Pisika ng Pilipinas 25, SPP-2007-3A-03 (2007). URL: https://proceedings.spp-online.org/article/view/SPP-2007-3A-03.