Bilayer thin film thickness measurement by spectroscopic ellipsometry

Authors

Ryan N. Alentajan ⋅ PH National Institute of Physics, University of the Philippines Diliman
Dyna Immaculate B. Garcia ⋅ PH National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Spectroscopic Ellipsometry (SE) was used to measure the thickness of Plasma Enhanced Chemical Vapor Deposition (PECVD) grown thin films – Si_xN_y and SiO₂ – deposited on an n-type Silicon substrate. Using the Levenberg-Marquardt algorithm for the modeling of the experimental data, a numerical curve fit with a minimized merit function value of 0.0089 was obtained. The numerical thicknesses returned by the best fit curve were 142.2 nm and 364.3 nm for the Si_xN_y and SiO₂ thin films respectively. Compared to the expected thicknesses set by the calibrated PECVD growth rate, this corresponds to percentage errors of 1.59 and 8.26. This minimal % error was backed up by the closeness of the plots of the merit function components with that of the experimental data.

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Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2007-1D-03

Section

Condensed Matter Physics

Published

2007-10-24

How to Cite

[1]

RN Alentajan, DIB Garcia, MJ Defensor, and AA Salvador, Bilayer thin film thickness measurement by spectroscopic ellipsometry, Proceedings of the Samahang Pisika ng Pilipinas 25, SPP-2007-1D-03 (2007). URL: https://proceedings.spp-online.org/article/view/SPP-2007-1D-03.