Bilayer thin film thickness measurement by spectroscopic ellipsometry

Authors

Ryan N. Alentajan National Institute of Physics, University of the Philippines Diliman
Dyna Immaculate B. Garcia National Institute of Physics, University of the Philippines Diliman
Michael J. Defensor National Institute of Physics, University of the Philippines Diliman
Arnel A. Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Spectroscopic Ellipsometry (SE) was used to measure the thickness of Plasma Enhanced Chemical Vapor Deposition (PECVD) grown thin films – Si_xN_y and SiO₂ – deposited on an n-type Silicon substrate. Using the Levenberg-Marquardt algorithm for the modeling of the experimental data, a numerical curve fit with a minimized merit function value of 0.0089 was obtained. The numerical thicknesses returned by the best fit curve were 142.2 nm and 364.3 nm for the Si_xN_y and SiO₂ thin films respectively. Compared to the expected thicknesses set by the calibrated PECVD growth rate, this corresponds to percentage errors of 1.59 and 8.26. This minimal % error was backed up by the closeness of the plots of the merit function components with that of the experimental data.

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Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2007-1D-03

Section

Condensed Matter Physics

Published

2007-10-24

How to Cite

[1]

RN Alentajan, DIB Garcia, MJ Defensor, and AA Salvador, Bilayer thin film thickness measurement by spectroscopic ellipsometry, Proceedings of the Samahang Pisika ng Pilipinas 25, SPP-2007-1D-03 (2007). URL: https://proceedings.spp-online.org/article/view/SPP-2007-1D-03.