Mapping the energy conversion efficiency and fill factor of a silicon photodiode operating in photovoltaic mode
Abstract
The energy conversion efficiency (ηCE) and the fill factor of a Silicon photodiode (Si PD) under photovoltaic mode is mapped in 2D. Radial dependence of ηCE is observed, with its value decreasing as one moves away from the circular metal bonding pad. The fill factor also has a non-uniform value along the radial direction, smallest at the central portion of the pn-overlay region. The external quantum efficiency (ηQE) when the Si PD operates as a detector was also mapped in 2D. Comparison of the 2D ηCE and ηQE reveals characteristics befitting the sample as a photodetector rather than a power generator.