Emission of terahertz wave from InAs thin films

Authors

Christopher T. Que ⋅ JP Institute of Laser Engineering, Osaka University
Masahiko Tani ⋅ JP Institute of Laser Engineering, Osaka University
Masanori Hangyo ⋅ JP Institute of Laser Engineering, Osaka University
Makoto Nakajima ⋅ JP Institute for Solid State Physics, The University of Tokyo

Abstract

Using ultrafast laser pulses, emission of terahertz radiation from InAs films grown on Si substrates is investigated. THz radiation from the InAs films with different film thickness are measured in transmission geometry and compared to that of a bulk InAs substrate in the reflection geometry. The strongest THz emission is from the thickest 520-nm film.

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Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2007-1C-01

Section

Optics and Microscopy

Published

2007-10-24

How to Cite

[1]

CT Que, M Tani, M Hangyo, and M Nakajima, Emission of terahertz wave from InAs thin films, Proceedings of the Samahang Pisika ng Pilipinas 25, SPP-2007-1C-01 (2007). URL: https://proceedings.spp-online.org/article/view/SPP-2007-1C-01.