Emission of terahertz wave from InAs thin films

Authors

  • Christopher T. Que Institute of Laser Engineering, Osaka University
  • Masahiko Tani Institute of Laser Engineering, Osaka University
  • Masanori Hangyo Institute of Laser Engineering, Osaka University
  • Makoto Nakajima Institute for Solid State Physics, The University of Tokyo

Abstract

Using ultrafast laser pulses, emission of terahertz radiation from InAs films grown on Si substrates is investigated. THz radiation from the InAs films with different film thickness are measured in transmission geometry and compared to that of a bulk InAs substrate in the reflection geometry. The strongest THz emission is from the thickest 520-nm film.

SPP 2007 Proceedings Cover

Downloads

Published

2007-10-24

Issue

2007: Proceedings of the 25th Samahang Pisika ng Pilipinas Physics Congress

Section

Optics and Microscopy

License

By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Emission of terahertz wave from InAs thin films”, Proc. SPP, vol. 25, no. 1, pp. SPP–2007, Oct. 2007, Accessed: Mar. 23, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2007-1C-01