Fabrication and characterization of InAlAs/InGaAs PIN structures lattice-matched to (100) InP grown via molecular beam epitaxy

Authors

John Vincent Misa National Institute of Physics, University of the Philippines Diliman
Ma. Frantessa Casco National Institute of Physics, University of the Philippines Diliman
Valynn Katrine Mag-usara National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

A lattice-matched In_0.64Al_0.36As/In_0.53Ga_0.47As/In_0.64Al_0.36As PIN heterostructure was grown on (100) InP substrate at 530°C for InAlAs layers and 510°C for InGaAs under an As flux of 2.4 x 10^–5 Torr. In/Ga and In/Al flux ratios of 1.13 and 1.95 respectively were maintained for each corresponding layer grown.
X-Ray diffraction confirms an Indium mole fraction of 0.53 and 0.64 for InGaAs and InAlAs respectively characteristic of an InP matched InGaAs epilayer and a mismatched InAlAs. Scanning Electron Microscopy shows anisotropy in growth as manifested by the differences in cross sectional features in the 011 and 0–11 directions, surface scans show smooth surfaces. Photocurrent measurements done on fabricated 250 micrometer mesa 1.28 and 1.5 micrometers which are well within the desired operating ranges.

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Issue

2006: Proceedings of the 24th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP-2006-PA-27

Section

Poster Session PA

Published

2006-10-25

How to Cite

[1]

JV Misa, MF Casco, VK Mag-usara, and A Salvador, Fabrication and characterization of InAlAs/InGaAs PIN structures lattice-matched to (100) InP grown via molecular beam epitaxy, Proceedings of the Samahang Pisika ng Pilipinas 24, SPP-2006-PA-27 (2006). URL: https://proceedings.spp-online.org/article/view/SPP-2006-PA-27.