Imaging of Si photodiode under different biasing conditions via optical feedback microscopy

Authors

Vernon Julius Cemine National Institute of Physics, University of the Philippines Diliman
Carlo Mar Blanca National Institute of Physics, University of the Philippines Diliman
Caesar Saloma National Institute of Physics, University of the Philippines Diliman

Abstract

Imaging of Silicon (Si) photodiode under unbiased, reverse, and forward biased conditions using optical feedback microscopy was undertaken. Comparison on the responses of the different photodiode regions (pn-overlay, n-type, metal pad, and substrate) for a particular temperature and as the temperature is increased was done. Thermal gradient maps of the photodiode for the different biasing conditions are presented.

Downloads

Issue

2006: Proceedings of the 24th Samahang Pisika ng Pilipinas National Physics Congress

Article ID

SPP-2006-1A-01

Section

Instrumentation and Optics

Published

2006-10-25

How to Cite

[1]

VJ Cemine, CM Blanca, and C Saloma, Imaging of Si photodiode under different biasing conditions via optical feedback microscopy, Proceedings of the Samahang Pisika ng Pilipinas 24, SPP-2006-1A-01 (2006). URL: https://proceedings.spp-online.org/article/view/SPP-2006-1A-01.