Efficiency of InGaAs/GaAs quantum well laser stripes with 30 μm mesa
Abstract
Efficiency of MBE-grown InGaAs/GaAs quantum well laser stripes fabricated with 30 μm mesa is determined at its lasing wavelength ~0.98 μm. The lowest threshold current density (Jth) measured is ~600 A/cm2 , much better than the last reported (2004) Jth ~4400 A/cm2 from a similar laser with 75 μm mesa. Room-temperature output power vs. injection current (at one laser facet) curves estimate the internal quantum efficiency (ηi) and the internal absorption loss (αi) to be ηi = 83 ± 23% (corrected) and αi = 75 ± 24 cm−1. The correction factor to the output power takes into account the undetected light due to elliptically diverging beam of the laser as verified by its far-field distributions.
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