Efficiency of InGaAs/GaAs quantum well laser stripes with 30 μm mesa

Authors

Imee Rose Tagaca ⋅ PH National Institute of Physics, University of the Philippines Diliman
Jesus Fernandez Jr. ⋅ PH National Institute of Physics, University of the Philippines Diliman
Armando Somintac ⋅ PH National Institute of Physics, University of the Philippines Diliman
Arnel Salvador ⋅ PH National Institute of Physics, University of the Philippines Diliman

Abstract

Efficiency of MBE-grown InGaAs/GaAs quantum well laser stripes fabricated with 30 μm mesa is determined at its lasing wavelength ~0.98 μm. The lowest threshold current density (J_th) measured is ~600 A/cm² , much better than the last reported (2004) J_th ~4400 A/cm² from a similar laser with 75 μm mesa. Room-temperature output power vs. injection current (at one laser facet) curves estimate the internal quantum efficiency (η_i) and the internal absorption loss (α_i) to be η_i = 83 ± 23% (corrected) and α_i = 75 ± 24 cm⁻¹. The correction factor to the output power takes into account the undetected light due to elliptically diverging beam of the laser as verified by its far-field distributions.

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Issue

2005: Proceedings of the 23rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2005-PB-11

Section

Poster Session PB

Published

2005-10-26

How to Cite

[1]

IR Tagaca, J Fernandez, A Somintac, and A Salvador, Efficiency of InGaAs/GaAs quantum well laser stripes with 30 μm mesa, Proceedings of the Samahang Pisika ng Pilipinas 23, SPP-2005-PB-11 (2005). URL: https://proceedings.spp-online.org/article/view/SPP-2005-PB-11.