Efficiency of InGaAs/GaAs quantum well laser stripes with 30 μm mesa

Authors

Imee Rose Tagaca National Institute of Physics, University of the Philippines Diliman
Jesus Fernandez Jr. National Institute of Physics, University of the Philippines Diliman
Armando Somintac National Institute of Physics, University of the Philippines Diliman
Arnel Salvador National Institute of Physics, University of the Philippines Diliman

Abstract

Efficiency of MBE-grown InGaAs/GaAs quantum well laser stripes fabricated with 30 μm mesa is determined at its lasing wavelength ~0.98 μm. The lowest threshold current density (J_th) measured is ~600 A/cm² , much better than the last reported (2004) J_th ~4400 A/cm² from a similar laser with 75 μm mesa. Room-temperature output power vs. injection current (at one laser facet) curves estimate the internal quantum efficiency (η_i) and the internal absorption loss (α_i) to be η_i = 83 ± 23% (corrected) and α_i = 75 ± 24 cm⁻¹. The correction factor to the output power takes into account the undetected light due to elliptically diverging beam of the laser as verified by its far-field distributions.

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Issue

2005: Proceedings of the 23rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2005-PB-11

Section

Poster Session PB

Published

2005-10-26

How to Cite

[1]

IR Tagaca, J Fernandez, A Somintac, and A Salvador, Efficiency of InGaAs/GaAs quantum well laser stripes with 30 μm mesa, Proceedings of the Samahang Pisika ng Pilipinas 23, SPP-2005-PB-11 (2005). URL: https://proceedings.spp-online.org/article/view/SPP-2005-PB-11.