Modified technique for NiSi Schottky contacts exhibiting ohmic behavior

Authors

Astrid Ayla E. Liberato Materials Science and Engineering Program, University of the Philippines Diliman
Deorex David A. Navaja Materials Science and Engineering Program, University of the Philippines Diliman
Roland V. Sarmago National Institute of Physics, University of the Philippines Diliman

Abstract

This paper involves the investigation of the electrical properties of nickel silicide intermetallic compound in order to confirm apparent ohmicity exhibited by Schottky contacts. The silicide layer was obtained using a modified technique for producing a Schottky contact. Nickel was deposited by thermal vacuum evaporation with varying amounts (120, 150, and 180 mg) and annealed using two-step RTP at 2^nd-anneal temperature of 500ºC. X-ray Diffraction patterns confirmed the formation of NiSi. Using a linear four-point probe, the contacts showed an ohmic characteristic based on the linear I-V curves. As the amount of vaporized nickel was increased, the resistance also increased. By comparison of the slopes of the I-V curves, the lowest resistance obtained was 0.3727 Ω at 120 mg Ni.

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Issue

2005: Proceedings of the 23rd Samahang Pisika ng Pilipinas Physics Congress

Article ID

SPP-2005-PA-38

Section

Poster Session PA

Published

2005-10-26

How to Cite

[1]

AAE Liberato, DDA Navaja, and RV Sarmago, Modified technique for NiSi Schottky contacts exhibiting ohmic behavior, Proceedings of the Samahang Pisika ng Pilipinas 23, SPP-2005-PA-38 (2005). URL: https://proceedings.spp-online.org/article/view/SPP-2005-PA-38.