Modified technique for NiSi Schottky contacts exhibiting ohmic behavior
Abstract
This paper involves the investigation of the electrical properties of nickel silicide intermetallic compound in order to confirm apparent ohmicity exhibited by Schottky contacts. The silicide layer was obtained using a modified technique for producing a Schottky contact. Nickel was deposited by thermal vacuum evaporation with varying amounts (120, 150, and 180 mg) and annealed using two-step RTP at 2nd-anneal temperature of 500ºC. X-ray Diffraction patterns confirmed the formation of NiSi. Using a linear four-point probe, the contacts showed an ohmic characteristic based on the linear I-V curves. As the amount of vaporized nickel was increased, the resistance also increased. By comparison of the slopes of the I-V curves, the lowest resistance obtained was 0.3727 Ω at 120 mg Ni.
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