Below-bandgap excited terahertz emission in GaAs/AlGaAs multiple quantum wells
Abstract
We present terahertz (THz) emission of optically pumped narrow (Lz = 5 nm) and wide (Lz = 12.5 nm) GaAs/AlGaAs multiple quantum wells (MQWs). The THz action spectra (excitation energy dependence of the THz radiation intensity) exhibit emission even at excitation energies below the MQW bandgaps. This observation is exhibited by both samples but is more pronounced in the 5 nm MQW sample. The results are attributed to states below the first conduction band energy level, possibly due to impurity levels that were incorporated during the molecular beam epitaxy (MBE) growth process. Although photoluminescence, photoluminescence excitation, and reflectivity data did not reveal these below-gap features, the presence of shallow traps are confirmed by deep level transient spectroscopy (DLTS) experiments.