Measurement of silicon dioxide thickness using reflectance spectrometer

Authors

Annabelle T. Corales ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
Marvin U. Herrera ⋅ PH Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños

Abstract

A reflectance spectrometer was modified to measure the reflectance of silicon dioxide thin film at different angles of incidence. Using Snell's Law and thin film thickness equation, the thickness of SiO₂ film was determined from the reflectance of the sample. The measured thickness was consistent with the SiO₂ Thickness Color Chart but with improved resolution.

Downloads

Issue

2003: Proceedings of the 21st Samahang Pisika ng Pilipinas Physics Congress

Creating essential bridges uniting physics, society and industry
22-25 October 2003, University of San Carlos, Cebu City

Article ID

SPP-2003-3E-04

Section

Instrumentation Physics

Published

2003-10-22

How to Cite

[1]

AT Corales and MU Herrera, Measurement of silicon dioxide thickness using reflectance spectrometer, Proceedings of the Samahang Pisika ng Pilipinas 21, SPP-2003-3E-04 (2003). URL: https://proceedings.spp-online.org/article/view/SPP-2003-3E-04.