Measurement of silicon dioxide thickness using reflectance spectrometer

Authors

  • Annabelle T. Corales Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños
  • Marvin U. Herrera Institute of Mathematical Sciences and Physics, University of the Philippines Los Baños

Abstract

A reflectance spectrometer was modified to measure the reflectance of silicon dioxide thin film at different angles of incidence. Using Snell's Law and thin film thickness equation, the thickness of SiO2 film was determined from the reflectance of the sample. The measured thickness was consistent with the SiO2 Thickness Color Chart but with improved resolution.

SPP 2003 Proceedings Cover

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Published

2003-10-22

Issue

2003: Proceedings of the 21st Samahang Pisika ng Pilipinas Physics Congress

Section

Instrumentation Physics

License

By submitting their manuscript to the Samahang Pisika ng Pilipinas (SPP) for consideration, the Authors warrant that their work is original, does not infringe on existing copyrights, and is not under active consideration for publication elsewhere.
Upon acceptance of their manuscript, the Authors further agree to grant SPP the non-exclusive, worldwide, and royalty-free rights to record, edit, copy, reproduce, publish, distribute, and use all or part of the manuscript for any purpose, in any media now existing or developed in the future, either individually or as part of a collection.
All other associated economic and moral rights as granted by the Intellectual Property Code of the Philippines are maintained by the Authors.

How to Cite

[1]
“Measurement of silicon dioxide thickness using reflectance spectrometer”, Proc. SPP, vol. 21, no. 1, pp. SPP–2003, Oct. 2003, Accessed: Mar. 28, 2026. [Online]. Available: https://proceedings.spp-online.org/article/view/SPP-2003-3E-04